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Sandeep K. Jain

Sandeep K. Jain appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2016arXiv

Boundaries Determine the Formation Energies of Lattice Defects in Two-Dimensional Buckled Materials

Lattice defects are inevitably present in two-dimensional materials, with direct implications on their physical and chemical properties. We show that the formation energy of a lattice defect in buckled two-dimensional crystals is not uniquely defined as it takes different values for different boundary conditions even in the thermodynamic limit, as opposed to their perfectly planar counterparts. Also, the approach to the thermodynamic limit follows a different scaling: inversely proportional to the logaritm of the system size for buckled materials, rather than the usual power-law approach. In graphene samples of $\sim 1000$ atoms, different boundary conditions can cause differences exceeding 10 eV. Besides presenting numerical evidence in simulations, we show that the universal features in this behavior can be understood with simple bead-spring models. Fundamentally, our findings imply that it is necessary to specify the boundary conditions for the energy of the lattice defects in the buckled two-dimensional crystals to be uniquely defined, and this may explain the lack of agreement in the reported values of formation energies in graphene. We argue that boundary conditions may also have impact on other physical observables such as the melting temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Structure of twisted and buckled bilayer graphene

We study the atomic structure of twisted bilayer graphene, with very small mismatch angles ($θ\sim 0.28^0$), a topic of intense recent interest. We use simulations, in which we combine a recently presented semi-empirical potential for single-layer graphene, with a new term for out-of-plane deformations, [Jain et al., J. Phys. Chem. C, 119, 2015] and an often-used interlayer potential [Kolmogorov et al., Phys. Rev. B, 71, 2005]. This combination of potentials is computationally cheap but accurate and precise at the same time, allowing us to study very large samples, which is necessary to reach very small mismatch angles in periodic samples. By performing large scale atomistic simulations, we show that the vortices appearing in the Moiré pattern in the twisted bilayer graphene samples converge to a constant size in the thermodynamic limit. Furthermore, the well known sinusoidal behavior of energy no longer persists once the misorientation angle becomes very small ($θ<1^0$). We also show that there is a significant buckling after the relaxation in the samples, with the buckling height proportional to the system size. These structural properties have direct consequences on the electronic and optical properties of bilayer graphene.

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preprint2015arXiv

Probing crystallinity of graphene samples via the vibrational density of states

The purity of graphene samples is of crucial importance for their experimental and practical use. In this regard, the detection of the defects is of direct relevance. Here, we show that structural defects in graphene samples give rise to clear signals in the vibrational density of states (VDOS) at the specific peaks at high and low frequencies.These can be used as an independent probe of the defect density. In particular, we consider grain boundaries made of pentagon-heptagon pairs, and show that they lead to a shift of the characteristic vibrational D mode towards higher frequency; this distinguishes these line defects from the Stone-Wales point defects, which do not lead to such a shift. Our findings may be instrumental for the detection of structural lattice defects using experimental techniques that can directly measure VDOS, such as inelastic electron tunneling and inelastic neutron spectroscopy.

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preprint2015arXiv

Strong long-range relaxations of structural defects in graphene simulated using a new semi-empirical potential

We present a new semi-empirical potential for graphene, which includes also an out-of-plane energy term. This novel potential is developed from density functional theory (DFT) calculations for small numbers of atoms, and can be used for configurations with millions of atoms. Our simulations show that buckling caused by typical defects such as the Stone-Wales (SW) defect extends to hundreds of nanometers. Surprisingly, this long-range relaxation lowers the defect formation energy dramatically - by a factor of $2$ or $3$ - implying that previously published DFT-calculated defect formation energies suffer from large systematic errors. We also show the applicability of the novel potential to other long-range defects including line dislocations and grain boundaries, all of which exhibit pronounced out-of-plane relaxations. We show that the energy as a function of dislocation separation diverges logarithmically for flat graphene, but converges to a constant for free standing buckled graphene. A potential in which the atoms are attracted to the 2D plane restores the logarithmic behaviour of the energy. Future simulations employing this potential will elucidate the influence of the typical long-range buckling and rippling on the physical properties of graphene.

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