BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

San-Huang Ke

San-Huang Ke appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-ph

Catalog footprint

What is connected

11works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

11 published item(s)

preprint2016arXiv

Electronic structures and edge effects of Ga2S2 nanoribbons

Ab initio density functional theory calculations are carried out to predict the electronic properties and relative stability of gallium sulfide nanoribbons (Ga2S2-NRs) with either zigzag- or armchair-terminated edges. It is found that the electronic properties of the nanoribbons are very sensitive to the edge structure. The zigzag nanoribbons (Ga2S2-ZNRs) are metallic with spin-polarized edge states regardless of the H-passivation,whereas the bare armchair ones (Ga2S2-ANRs) are semiconducting with an indirect band gap. This band gap exhibits an oscillation behavior as the width increases and finally converges to a constant value. Similar behavior is also found in H-saturated Ga2S2-ANRs, although the band gap converges to a larger value. The relative stabilities of the bare ANRs and ZNRs are investigated by calculating their binding energies. It is found that for a similar width the ANRs are more stable than the ZNRs, and both are more stable than some Ga2S2 nanocluters with stable configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Conductance of Ferro- and Antiferro-magnetic single-atom contacts: A first-principles study

We present a first-principles study on the spin denpendent conductance of five single-atom magnetic junctions consisting of a magnetic tip and an adatom adsorbed on a magnetic surface, i.e., the Co-Co/Co(001) and Ni-X/Ni(001) (X=Fe, Co, Ni, Cu) junctions. When their spin configuration changes from ferromagnetism to anti-ferromagnetism, the spin-up conductance increases while the spin-down one decreases. For the junctions with a magnetic adatom, there is nearly no spin valve effect as the decreased spin-down conductance counteracts the increased spin-up one. For the junction with a nonmagnetic adatom (Ni-Cu/Ni(001)), a spin valve effect is obtained with a variation of 22% in the total conductance. In addition, the change in spin configuration enhances the spin filter effect for the Ni-Fe/Ni(001) junction but suppresses it for the other junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Regular quantum plasmons in segments of graphene nanoribbons

Graphene plasmons have advantages over noble metal plasmons, such as high tunability and low loss. However, for graphene nanostructures smaller than 10 nm, little is known about their plasmons or whether a regular plasmonic behavior exists, despite their potential applications. Here, we present first-principles calculations of plasmon excitations in zigzag graphene nanoribbon segments. Regular plasmonic behavior is found: Only one plasmon mode exists in the low-energy regime (< 1.5 eV). The classical electrostatic scaling law still approximately holds when the width (W) is larger than about 1.5 nm but totally fails when W < 1.5 nm due to quantum effects. The scaling with different doping densities shows that the plasmon is nearly free-electron plasmon instead of Dirac plasmon.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Conductance of single-atom magnetic junctions: A first-principles study

We present a first-principles investigation to show that the contact conductance of a half conductance quantum ($G_0/2$) found previously does not generally hold for single-atom magnetic junctions composed of a tip and an adatom dsorbed on a surface. The contact conductance of the Ni-Co/Co(111) junction is approximately $G_0/2$, while for the Co-Co/Co(111), Ni-Ni/Ni(111), and Ni-Ni/Ni(001) junctions the contact conductances are 0.80$G_0$, 1.55$G_0$, and 1.77$G_0$, respectively. The deviation from $G_0/2$ is mainly caused by the variation of the spin-down conductance largely determined by the minority $d$ orbitals, as the spin-up one changes little for different junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Highly tunable spin-dependent electron transport through carbon atomic chains connecting two zigzag graphene nanoribbons

Motivated by recent experiments of successfully carving out stable carbon atomic chains from graphene, we investigate a device structure of a carbon chain connecting two zigzag graphene nanoribbons with highly tunable spin-dependent transport properties. Our calculation based on the non-equilibrium Green's function approach combined with the density functional theory shows that the transport behavior is sensitive to the spin configuration of the leads and the bridge position in the gap. A bridge in the middle gives an overall good coupling except for around the Fermi energy where the leads with anti-parallel spins create a small transport gap while the leads with parallel spins give a finite density of states and induce an even-odd oscillation in conductance in terms of the number of atoms in the carbon chain. On the other hand, a bridge at the edge shows a transport behavior associated with the spin-polarized edge states, presenting sharp pure $α$-spin and $β$-spin peaks beside the Fermi energy in the transmission function. This makes it possible to realize on-chip interconnects or spintronic devices by tuning the spin state of the leads and the bridge position.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Hydrogen storage in MOF-5: A van der Waals density functional theory study

Physisorption of hydrogen molecules in metal-organic frameworks (MOFs) provides a promising way for hydrogen storage, in which the van der Waals (vdW) interaction plays an important role but cannot described by the density functional theory (DFT). By using the vdW density functional (vdW-DF) method, we investigate systematically the binding energies of hydrogen molecules in MOF-5 crystal. We first examine the accuracy of this methodology by comparing its results with those from the correlated quantum chemistry methods for several fragment models cut out from the crystal. Good comparable accuracy is found. By performing calculations for the true crystal structure adsorbing one or multiple H$_2$ in the primitive cell, we show that these fragment models which have been focused previously cannot represent well the property of the crystal which cannot, however, be dealt with by the quantum chemistry methods. It is found that the binding energy with the organic linker is much smaller than with the metal oxide corner, which limits the H$_2$ loading. We show that this can be improved significantly (from 5.50 to 10.39 kJ/mol) by replacing the H atoms of the organic linker with F atoms which cause extra electrostatic interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Plasmon excitations in planar sodium clusters

The collective electronic excitation in planar sodium clusters is studied by time-dependent density functional theory calculations. The formation and development of the resonances in photoabsorption spectra are investigated in terms of the shape and size of the 2-dimensional (2-D) systems. The nature of these resonances is revealed by the frequency-resolved induced charge densities present on a real-space grid. For long double chains, the excitation is similar to that in long single atomic chains, showing longitudinal modes, end and central transverse modes. However, for 2-D planes consisting of ($n \times n$) atoms with $n$ up to 16, new 2-D characteristic modes emerge regardless of the symmetries considered. For a kick parallel to the plane, besides the equivalent end mode, mixed modes with contrary polarity occur, while for an impulse perpendicular to the plane there will be corner, side center, bulk center, and circuit modes. Our calculation reveals the importance of dimensionality for plasmon excitation and how it evolves from 1-D to 2-D.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states via defective boundaries

One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles method, we derived and proved a general edge (boundary) condition for the opening of a significant bandgap in ZGNRs with defective edge structures. The proposed semiconducting GNRs have some interesting properties including the one that they can be embedded and integrated in a large piece of graphene without the need of completely cutting them out. We also demonstrated a new type of high-performance all-ZGNR FET.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

All-electron GW calculation for molecules: Ionization energy and electron affinity of conjugated molecules

An efficient all-electron G$^0$W$^0$ method and a quasiparticle selfconsistent GW (QSGW) method for molecules are proposed in the molecular orbital space with the full random phase approximation. The convergence with basis set is examined. As an application, the ionization energy ($I$) and electron affinity ($A$) of a series of conjugated molecules (up to 32 atoms) are calculated and compared to experiment. The QSGW result improves the G$^0$W$^0$ result and both of them are in significantly better agreement with experimental data than those from Hartree-Fock (HF) and hybrid density functional calculations, especially for $A$. The nearly correct energy gap and suppressed self-interaction error by the HF exchange make our method a good candidate for investigating electronic and transport properties of molecular systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The infrared spectra of ABC-stacking tri- and tetra-layer graphenes studied by first-principles calculations

The infrared absorption spectra of ABC-stacking tri- and tetra-layer graphenes are studied using the density functional theory. It is found that they exhibit very different characteristic peaks compared with those of AB-stacking ones, caused by the different stacking sequence and interlayer coupling. The anisotropy of the spectra with respect to the direction of the light electric field is significant. The spectra are more sensitive to the stacking number when the electric field is perpendicular to the graphene plane due to the interlayer polarization. The high sensitivities make it possible to identify the stacking sequence and stacking number of samples by comparing theory and experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Time-Dependent Transport Through Molecular Junctions

We investigate transport properties of molecular junctions under two types of bias--a short time pulse or an AC bias--by combining a solution for the Green functions in the time domain with electronic structure information coming from ab initio density functional calculations. We find that the short time response depends on lead structure, bias voltage, and barrier heights both at the molecule-lead contacts and within molecules. Under a low frequency AC bias, the electron flow either tracks or leads the bias signal (capacitive or resistive response) depending on whether the junction is perfectly conducting or not. For high frequency, the current lags the bias signal due to the kinetic inductance. The transition frequency is an intrinsic property of the junctions.

0 citations0 reviewsNo code linkedOpen access