Researcher profile

Samuel Huberman

Samuel Huberman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - Emerging
7works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2022arXiv

Mode- and Space- Resolved Thermal Transport of Alloy Nanostructures

Nanostructured semiconducting alloys obtain ultra-low thermal conductivity as a result of the scattering of phonons with a wide range of mean-free-paths (MFPs). In these materials, long-MFP phonons are scattered at the nanoscale boundaries whereas short-MFP high-frequency phonons are impeded by disordered point defects introduced by alloying. While this trend has been validated by simplified analytical and numerical methods, an ab-initio space-resolved approach remains elusive. To fill this gap, we calculate the thermal conductivity reduction in porous alloys by solving the mode-resolved Boltzmann transport equation for phonons using the finite-volume approach. We analyze different alloys, length-scales, concentrations, and temperatures, obtaining a very large reduction in the thermal conductivity over the entire configuration space. For example, a ~97% reduction is found for Al$_{0.8}$In$_{0.2}$As with 25% porosity. Furthermore, we employ these simulations to validate our recently introduced "Ballistic Correction Model" (BCM), an approach that estimates the effective thermal conductivity using the characteristic MFP of the bulk alloy and the length-scale of the material. The BCM is then used to provide guiding principles in designing alloy-based nanostructures. Notably, it elucidates how porous alloys such as Si$_{x}$Ge$_{1-x}$ obtain larger thermal conductivity reduction compared to porous Si or Ge, while also explaining why we should not expect similar behavior in alloys such as Al$_{x}$In$_{1-x}$As. By taking into account the synergy from scattering at different scales, we provide a route for the design of materials with ultra-low thermal conductivity.

preprint2022arXiv

On the emergence of heat waves in the transient thermal grating geometry

The propagation of heat in the transient thermal grating geometry is studied based on phonon Boltzmann transport equation (BTE) in different phonon transport regimes. Our analytical and numerical results show that the phonon dispersion relation and temperature play a significant role in the emergence of heat wave. For the frequency-independent BTE, the heat wave appears as long as the phonon resistive scattering is not sufficient, while for the frequency-dependent BTE, the heat wave could disappear in the ballistic regime, depending on the grating period and temperature. We predict that the heat wave could appear in the suspended graphene and silicon in extremely low temperature but disappear at room temperature.

preprint2016arXiv

Monte Carlo Study of Non-diffusive Relaxation of A Transient Thermal Grating in Thin Membranes

The impact of boundary scattering on non-diffusive thermal relaxation of a transient grating in thin membranes is rigorously analyzed using the multidimensional phonon Boltzmann equation. The gray Boltzmann simulation results indicate that approximating models derived from previously reported one-dimensional relaxation model and Fuchs-Sondheimer model fail to describe the thermal relaxation of membranes with thickness comparable with phonon mean free path. Effective thermal conductivities from spectral Boltzmann simulations completely free of any fitting parameters are shown to agree reasonably well with experimental results. These findings are important for improving our fundamental understanding of non-diffusive thermal transport in membranes and other nanostructures.

preprint2016arXiv

Variational Approach to Solving the Spectral Boltzmann Transport Equation in Transient Thermal Grating for Thin Films

The phonon Boltzmann transport equation (BTE) is widely utilized to study non-diffusive thermal transport. We find a solution of the BTE in the thin film transient thermal grating (TTG) experimental geometry by using a recently developed variational approach with a trial solution supplied by the Fourier heat conduction equation. We obtain an analytical expression for the thermal decay rate that shows excellent agreement with Monte Carlo simulations. We also obtain a closed form expression for the effective thermal conductivity that demonstrates the full material property and heat transfer geometry dependence, and recovers the limits of the one-dimensional TTG expression for very thick films and the Fuchs-Sondheimer expression for very large grating spacings. The results demonstrate the utility of the variational technique for analyzing non-diffusive phonon-mediated heat transport for nanostructures in multi-dimensional transport geometries, and will assist the probing of the mean free path (MFP) distribution of materials via transient grating experiments.

preprint2015arXiv

A Variational Approach to Extracting the Phonon Mean Free Path Distribution from the Spectral Boltzmann Transport Equation

The phonon Boltzmann transport equation (BTE) is a powerful tool for studying non-diffusive thermal transport. Here, we develop a new universal variational approach to solving the BTE that enables extraction of phonon mean free path (MFP) distributions from experiments exploring non-diffusive transport. By utilizing the known Fourier solution as a trial function, we present a direct approach to calculating the effective thermal conductivity from the BTE. We demonstrate this technique on the transient thermal grating (TTG) experiment, which is a useful tool for studying non-diffusive thermal transport and probing the mean free path (MFP) distribution of materials. We obtain a closed form expression for a suppression function that is materials dependent, successfully addressing the non-universality of the suppression function used in the past, while providing a general approach to studying thermal properties in the non-diffusive regime.

preprint2015arXiv

Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion

While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time, success in first-principles computation of the phonon drag effect - a coupling phenomenon between electrons and non-equilibrium phonons - in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that while the phonon drag is reduced in heavily-doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to around 0.25, and the enhancement can reach 70 times at 100K. This work opens up a new venue towards better thermoelectrics by harnessing non-equilibrium phonons.

preprint2014arXiv

Significant reduction of lattice thermal conductivity by electron-phonon interaction in silicon with high carrier concentrations: a first-principles study

Electron-phonon interaction has been well known to create major resistance to electron transport in metals and semiconductors, whereas less studies were directed to its effect on the phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first-principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 1e19 cm-3 (the reduction reaches up to 45% in p-type silicon at around 1e21 cm-3), a range of great technological relevance to thermoelectric materials.