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Saikat Talapatra

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2021arXiv

Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors

Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids are crucial for developing optoelectronics applications. Here we present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thickness (t, 20 nm < t < 100 nm) were investigated with a continuous laser source of λ = 658 nm (1.88 eV) over a wide range of illumination power of 22.8 nW < P < 1.29 μW. All the devices studied, showed signatures of photogating, however, our investigations suggest that the photoresponsivities are strongly dependent on the thickness of the conductive channel. A correlation between the field-effect mobility (μFE) values (as a function of channel thickness, t) and photoresponsivity (R) indicates that in general R increases with increasing μFE (decreasing t) and vice versa. The maximum responsivity of ~ 7.84 A/W and ~ 0.59 A/W was obtained for the device with t = 20 nm and t = 100 nm respectively. These values could substantially increase under the application of a gate voltage. The structure-property correlation-based studies presented here indicate the possibility of tuning the optical properties of InSe based photo-FETs for a variety of applications related to photodetector and/or active layers in solar cells.

preprint2016arXiv

Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements

Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ~85 A/W and ~20000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.

preprint2015arXiv

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few- layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm2/Vs in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Owing to their high crystalline quality, Raman spectroscopy on these samples reveal a range of multi-phonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness- and substrate-dependence of the extremely weak phonon processes at 285 cm-1 and 487 cm-1 in 2D MoS2. The ultra-high, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on device fabricated with mechanically exfoliated that were artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D MoS2 for scalable, high-quality optoelectronics.

preprint2012arXiv

Growth of carbon nanotubes on quasicrystalline alloys

We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also been made between tubes grown on various quasicrystalline and SiO2 substrates. While a significant MWNT growth was observed on decagonal quasicrystalline substrate, there was no significant growth observed on icosahedral quasicrystalline substrate. Raman spectroscopy and high resolution transmission electron microscopy (HRTEM) results show high crystalline nature of the nanotubes. Presence of continuous iron filled core in the nanotubes grown on these substrates was also observed, which is typically not seen in MWNTs grown using similar process on silicon and/or silicon dioxide substrates. The study has important implications for understanding the growth mechanism of MWNTs on conducting substrates which have potential applications as heat sinks.

preprint2010arXiv

Double resonance Raman study of disorder in CVD-grown single-walled carbon nanotubes

Single-walled carbon nanotubes (SWNTs) with varying degrees of disorder were investigated using multiple-excitation Raman spectroscopy. The lattice disorder was imparted into the nanotubes by the addition of varying amounts of sulfur to the iron catalyst in a thermal chemical vapor deposition process. Changes in the intensities of peaks occurring due to a double resonance Raman process were studied. The intensity of the disorder-induced D band increased with a decrease in the sulfur content. Upon post-synthesis heat treatment, the double resonance process got quenched due to defect healing. The second order G' band and iTOLA bands exhibited a two-peak structure, of which one of the peaks is relatively more sensitive to defects and decreased in intensity with heat treatment.