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S. Zh. Karazhanov

S. Zh. Karazhanov contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2014arXiv

Excitons in \ce{Mg(OH)2} and \ce{Ca(OH)2} from \textit{ab initio} calculations

By using \textit{ab initio} calculations with the HSE06 hybrid functional and GW approximation combined with numerical solution of the Bethe Salpeter equation (GW-BSE) we predict the existence of diverse number of excitonic states in multifunctional hydroxides \ce{\textit{X}(OH)2} (\textit{X}= Mg and Ca) that were not previously reported experimentally or theoretically. Imaginary part of the dielectric function and reflectivity spectra show very strong peaks corresponding to the electron-hole pair states of large binding energy. The origin of the excitons is attributed to strong localization of the hole and electron associated to oxygen $2p_x, 2p_y$ occupied states as well as to oxygen and earth metal $s$ empty states, respectively. The results have important implications for different applications of the materials in optoelectronic devices.

preprint2014arXiv

Vibrational zero point energy for H-doped Silicon

Most of the studies addressed to computations of hydrogen parameters in semiconductor systems, such as silicon, are performed at zero temperature T=0 K and do not account for contribution of vibrational zero point energy (ZPE). For light weight atoms such as hydrogen (H), however, magnitude of this parameter might be not negligible. This work is devoted to clarify the importance of accounting the zero-point vibrations when analyzing hydrogen behavior in silicon and its effect on silicon electronic properties. For this, we estimate the ZPE for different locations and charge states of H in Si. We show that the main contribution to the ZPE is coming from vibrations along the Si-H bonds whereas contributions from other Si atoms apart from the direct Si-H bonds play no role. It is demonstrated that accounting the ZPE reduces the hydrogen formation energy by ~0.17 eV meaning that neglecting ZPE at low temperatures one can underestimate hydrogen solubility by few orders of magnitude. In contrast, the effect of the ZPE on the ionization energy of H in Si is negligible. The results can have important implications for characterization of vibrational properties of Si by inelastic neutron scattering, as well as for theoretical estimations of H concentration in Si.

preprint2011arXiv

Transparent yttrium hydride thin films prepared by reactive sputtering

Metal hydrides have earlier been suggested for utilization in solar cells. With this as a motivation we have prepared thin films of yttrium hydride by reactive magnetron sputter deposition. The resulting films are metallic for low partial pressure of hydrogen during the deposition, and black or yellow-transparent for higher partial pressure of hydrogen. Both metallic and semiconducting transparent YHx films have been prepared directly in-situ without the need of capping layers and post-deposition hydrogenation. Optically the films are similar to what is found for YHx films prepared by other techniques, but the crystal structure of the transparent films differ from the well-known YH3 phase, as they have an fcc lattice instead of hcp.