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S. -Y. Lee

S. -Y. Lee contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2014arXiv

Charge frustration in a triangular triple quantum dot

We experimentally investigate the charge (isospin) frustration induced by a geometrical symmetry in a triangular triple quantum dot. We observe the ground-state charge configurations of six-fold degeneracy, the manifestation of the frustration. The frustration results in omnidirectional charge transport, and it is accompanied by nearby nontrivial triple degenerate states in the charge stability diagram. The findings agree with a capacitive interaction model. We also observe unusual transport by the frustration, which might be related to elastic cotunneling and the interference of trajectories through the dot. This work demonstrates a unique way of studying geometrical frustration in a controllable way.

preprint2014arXiv

Multi-Valued Logic Gates based on Ballistic Transport in Quantum Point Contacts

Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two quaternary number inputs is demonstrated. The device is scalable to allow multiple inputs, which makes it possible to find the minimum of multiple inputs in a single gate operation. Also, the principle of a half-adder for quaternary number inputs is demonstrated. First, an adder that adds up two quaternary numbers and outputs the sum of inputs is demonstrated. Second, a device to express the sum of the adder into two quaternary digits [Carry (first digit) and Sum (second digit)] is demonstrated. All the logic gates presented in this paper can in principle be extended to allow decimal number inputs with high quality QPCs.

preprint2014arXiv

Unified approach to contextuality, non-locality, and temporal correlations

We highlight the existence of a joint probability distribution as the common underpinning assumption behind Bell-type, contextuality, and Leggett-Garg-type tests. We then present a procedure to translate contextual scenarios into temporal Leggett-Garg-type and spatial Bell-type ones. To demonstrate the generality of this approach we construct a family of spatial Bell-type inequalities. We show that in Leggett-Garg scenario a necessary condition for contextuality in time is given by a violation of consistency conditions in Consistent Histories approach to quantum mechanics.

preprint2012arXiv

Numerical study of spin-dependent transition rates within pairs of dipolar and strongly exchange coupled spins with (s=1/2) during magnetic resonant excitation

The effect of dipolar and exchange interactions within pairs of paramagnetic electronic states on Pauli-blockade-controlled spin-dependent transport and recombination rates during magnetic resonant spin excitation is studied numerically using the superoperator Liouville-space formalism. The simulations reveal that spin-Rabi nutation induced by magnetic resonance can control transition rates which can be observed experimentally by pulsed electrically (pEDMR) and pulsed optically (pODMR) detected magnetic resonance spectroscopies. When the dipolar coupling exceeds the difference of the pair partners&#39; Zeeman energies, several nutation frequency components can be observed, the most pronounced at sqrt{2} gamma B_1 (gamma is the gyromagnetic ratio, B_1 is the excitation field). Exchange coupling does not significantly affect this nutation component; however, it does strongly influence a low-frequency component < gamma B_1. Thus, pEDMR/pODMR allow the simultaneous identification of exchange and dipolar interaction strengths.

preprint2009arXiv

$T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for [$^{31}$P] = 10$^{15}$ $\mathrm{cm}^{-3}$ and [$^{31}$P] = 10$^{16}$ $\mathrm{cm}^{-3}$ at about liquid $^4$He temperatures ($T = 5$ $\mathrm{K} - 15$ $\mathrm{K}$). Using pulsed electrically detected magnetic resonance (pEDMR), spin--dependent transitions between the \Phos donor state and two distinguishable interface states are observed, namely (i) \Pb centers which can be identified by their characteristic anisotropy and (ii) a more isotropic center which is attributed to E$^\prime$ defects of the \sio bulk close to the interface. Correlation measurements of the dynamics of spin--dependent recombination confirm that previously proposed transitions between \Phos and the interface defects take place. The influence of these electronic near--interface transitions on the \Phos donor spin coherence time $T_2$ as well as the donor spin--lattice relaxation time $T_1$ is then investigated by comparison of spin Hahn--echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that both $T_2$ and $T_1$ of \Phos donor electrons spins in proximity of energetically lower interface states at $T\leq 13$ K are reduced by several orders of magnitude.