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Researcher profile

S. Xavier

S. Xavier contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

3 published item(s)

preprint2016arXiv

Spin wave amplification using the spin Hall effect in permalloy/platinum bilayers

We investigate the effect of an electrical current on the attenuation length of a 900 nm wavelength spin-wave in a permalloy/Pt bilayer using propagating spin-wave spectroscopy. The modification of the spin-wave relaxation rate is linear in current density, reaching up to 14% for a current density of 2.3$\times10^{11} $A/m$^2$ in Pt. This change is attributed to the spin transfer torque induced by the spin Hall effect and corresponds to an effective spin Hall angle of 0.13, which is among the highest values reported so far. The spin Hall effect thus appears as an efficient way of amplifying/attenuating propagating spin waves.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-performance ferroelectric memory based on fully patterned tunnel junctions

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Engineered arrays of NV color centers in diamond based on implantation of CN- molecules through nanoapertures

We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a PMMA layer deposited on a diamond surface. The implantation was performed with CN- molecules which increased the NV defect formation yield. This method could enable the realization of a solid-state coupled-spin array and could be used for positioning an optically active NV center on a photonic microstructure.

0 citations0 reviewsNo code linkedOpen access