Source author record

S. -X. Ouyang

S. -X. Ouyang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2014arXiv

Magnetic / dielectric anomalies and magnetodielectric / magnetoelectric effects in Z- and W-type hexaferrites

Two kinds of specimens, with the major phase of Sr3Co2Fe24O41 (Sr3Co2Z) and SrCo2Fe16O27 (SrCo2W) hexaferrites respectively, were fabricated through solid-state reaction. The phase composition, magnetic and dielectric properties, magnetodielectric (MD) effect, magnetoelectric (ME) effect and pyroelectric properties were studied. Results show that magnetic and dielectric anomalies are induced by the magnetocrystalline anisotropy (MCA) transition. They can be considered as characteristic properties (e.g., Sr3Co2Z at 370 K) but are not a sufficient condition for the MD and ME coupling. The T-block structure, existing in Sr3Co2Z but absent in SrCo2W, results in the dielectric response with ferroelectric (FE) and magnetic contributions.

preprint2014arXiv

Negative differential resistance: another banana?

Just like the artefact found in ferroelectric hysteresis loops, the nearly identical NDR effect shown in Sr3Co2Fe24O41, TiO2, Al2O3, glass and even banana skins is confirmed to be a kind of water behavior. The combination of water induced tunneling effect, water decomposition and absorption plays a crucial role in the NDR effect. The results and mechanism demonstrated here illustrate that much attention should be paid to the chemical environment when studying electrical properties of materials / devices.