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S. V. Shutov

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Published work

2 published item(s)

preprint2010arXiv

Dielectric function of (ZnxCd1-x)3P2 alloy system in the region of direct optical transitions

The band structure of (ZnxCd1-x)3P2 alloy system is considered within the framework of Kildal's band model. Frequency dependencies of real and imaginary parts of dielectric function were received and analyzed in terms of direct band to band transitions. Theoretical calculations were performed for light polarized both parallel and perpendicular to the c- axis of the crystal. In calculations the selection rules for optical transitions were applied. The frequency dependence of real part of dielectric function is described by a maximum in hv=(1,2 - 1,5)Eg energy region. In high energy region hv>>Eg the imaginary part of dielectric function has a plateau. Longitudinal dielectric function is less than the transverse dielectric function for all compositions x of (ZnxCd1-x)3P2 alloy system both for real and imaginary parts. When turning from Zn3P2 to Cd3P2 the reduction of dielectric function values occurs.

preprint2008arXiv

Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from 3x1021 to 6x1022 quantum/(cm2/s) are investigated. The observed dependences are explained by formation of the density tails of states as a result of fluctuations of impurity concentration and participation of localized states of the donor impurity band in radiative transitions. Reduction of many-particle interaction at increasing of N can be connected with increasing of shielding of charge carriers by atoms of impurity.