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Researcher profile

S. Tongay

S. Tongay contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

5 published item(s)

preprint2021arXiv

Intrinsic circularly-polarized exciton emission in a twisted van-der-Waals heterostructure

The investigation of excitons in van-der-Waals heterostructures has led to profound insights into the interplay of crystal symmetries and fundamental effects of light-matter coupling. In particular, the polarization selection rules in undistorted, slightly twisted heterostructures of MoSe$_2$/WSe$_2$ were found to be connected with the Moiré superlattice. Here, we report the emergence of a significant degree of circular polarization of excitons in such a hetero-structure upon non-resonant driving with a linearly polarized laser. The effect is present at zero magnetic field, and sensibly reacts on perpendicularly applied magnetic field. The giant magnitude of polarization, which cannot be explained by conventional birefringence or optical activity of the twisted lattice, suggests a kinematic origin arising from an emergent pyromagnetic symmetry in our structure, which we exploit to gain insight into the microscopic processes of our device.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Demonstration of a polariton step potential by local variation of light-matter coupling in a van-der-Waals heterostructure

The large oscillator strength of excitons in transition metal dichalcogenide layers facilitates the formation of exciton-polariton resonances for monolayers and van-der-Waals heterostructures embedded in optical microcavities. Here, we show, that locally changing the number of layers in a WSe2/hBN/WSe2 van-der-Waals heterostructure embedded in a monolithic, high-quality-factor cavity gives rise to a local variation of the coupling strength. This effect yields a polaritonic stair case potential, which we demonstrate at room temperature. Our result paves the way towards engineering local polaritonic potentials at length scales down to atomically sharp interfaces, based on purely modifying its real part contribution via the coherent light-matter coupling strength g.

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preprint2013arXiv

Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2

Typical Raman spectra of transition metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak. As the dimensionality is lowered, the observed peak splits in two as a result of broken degeneracy. In contrast to our experimental findings, our phonon dispersion calculations reveal that these modes remain degenerate independent of the number of layers. Interestingly, for minuscule biaxial strain the degeneracy is preserved but once the crystal symmetry is broken by uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained WSe2 shows a perfect match to the measured Raman spectrum which suggests that uniaxial strain exists in WSe2 flakes possibly induced during the sample preparation and/or as a result of interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an indirect to direct bandgap transition from bulk to monolayers which is ubiquitous for semiconducting TMDs. These results not only allow us to understand the vibrational properties of WSe2 but also provides detailed insight to their physical properties.

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preprint2012arXiv

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC and GaN semiconductor substrates, there is a strong van der Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications, such as to sensors where in forward bias there is exponential sensitivity to changes in the Schottky barrier height due to the presence of absorbates on the graphene or to analogue devices for which Schottky barriers are integral components are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures and its demonstrated capability to embrace multiple functionalities.

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preprint2009arXiv

Supermetallic conductivity in bromine-intercalated graphite

Exposure of highly oriented pyrolytic graphite to bromine vapor gives rise to in-plane charge conductivities which increase monotonically with intercalation time toward values (for ~6 at% Br) that are significantly higher than Cu at temperatures down to 5 K. Magnetotransport, optical reflectivity and magnetic susceptibility measurements confirm that the Br dopes the graphene sheets with holes while simultaneously increasing the interplanar separation. The increase of mobility (~ 5E4 cm^2/Vs at T=300 K) and resistance anisotropy together with the reduced diamagnetic susceptibility of the intercalated samples suggests that the observed supermetallic conductivity derives from a parallel combination of weakly-coupled hole-doped graphene sheets.

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