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Researcher profile

S. Schulz

S. Schulz contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.str-el

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Published work

10 published item(s)

preprint2020arXiv

Observation of a cubic Rashba effect in the surface spin structure of rare-earth ternary materials

Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k.p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electronic structure of semiconductor nanostructures: A modified localization landscape theory

In this paper we present a modified localization landscape theory to calculate localized/confined electron and hole states and the corresponding energy eigenvalues without solving a (large) eigenvalue problem. We motivate and demonstrate the benefit of solving $\hat{H}^2u=1$ in the modified localization landscape theory in comparison to $\hat{H}u=1$, solved in the localization landscape theory. We detail the advantages by fully analytic considerations before targeting the numerical calculation of electron and hole states and energies in III-N heterostructures. We further discuss how the solution of $\hat{H}^2u=1$ is used to extract an effective potential $W$ that is comparable to the effective potential obtained from $\hat{H}u=1$, ensuring that it can for instance be used to introduce quantum corrections to drift-diffusion transport calculations. Overall, we show that the proposed modified localization landscape theory keeps all the benefits of the recently introduced localization landscape theory but further improves factors such as convergence of the calculated energies and the robustness of the method against the chosen integration region for $u$ to obtain the corresponding energies. We find that this becomes especially important for here studied $c$-plane InGaN/GaN quantum wells with higher In contents. All these features make the proposed approach very attractive for calculation of localized states in highly disordered systems, where partitioning the systems into different subregions can be difficult.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on key factors that determine the fine-structure splitting in these systems. Using a pure InAs/GaAs quantum dot as a reference system, we show that the combination of spin-orbit coupling and biaxial strain effects can lead to sizeable spin-splitting effects in these systems. Then, a realistic alloyed InGaAs/GaAs quantum dot with 25\% InAs content is studied. Our analysis reveals that the impact of random alloy fluctuations on the electronic and optical properties of (111)-oriented InGaAs/GaAs quantum dots reduces strongly as the lateral size of the dot increases and approaches realistic sizes. For instance the optical matrix element shows an almost vanishing anisotropy in the (111)-growth plane. Furthermore, conduction and valence band mixing effects in the system under consideration are strongly reduced compared to standard (100)-oriented InGaAs/GaAs systems. All these factors strongly indicate a reduced fine structure splitting in site-controlled (111)-oriented InGaAs/GaAs quantum dots. Thus, we conclude that quantum dots with realistic (50-80~nm) base length represent promising candidates for polarization entangled photon generation, consistent with recent experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Impact of cation-based localized electronic states on the conduction and valence band structure of AlInN alloys

We demonstrate that cation-related localized states strongly perturb the band structure of $\text{Al}_{1-x}\text{In}_x$N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in $\text{Al}_{1-x}\text{In}_x$N for low In composition, $x$, and that these localized states dominate the evolution of the band structure with increasing $x$. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in $\text{Al}_{1-x}\text{In}_x$N.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental study

A combined experimental and theoretical study is presented of the band gap of AlInN, confirming the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition dependent bowing parameters for these quantities are extracted. Additionally, composition dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at much lower In composition than expected from a VCA approach.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry adapted $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian

In this work, we present and evaluate a (111)-rotated eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented continuum elasticity model, we employ this approach to investigate the electronic properties of a realistic site-controlled (111)-grown InGaAs quantum dot. We combine these studies with an evaluation of single-band effective mass and eight-band $\mathbf{k}\cdot\mathbf{p}$ models, to investigate the capabilities of these models for the description of electronic properties of (111)-grown zinc-blende quantum dots. Moreover, the influence of second-order piezoelectric contributions on the polarisation potential in such systems is studied. The description of the electronic structure of nanostructures grown on (111)-oriented surfaces can now be achieved with significantly reduced computational costs in comparison to calculations performed using the conventional (001)-oriented models.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation

In this work we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite crystal structure on an atomistic level. Optical dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for full configuration interaction calculations. We present multi-exciton emission spectra and discuss in detail how Coulomb correlations and oscillator strengths are changed by the piezoelectric fields present in the structure. Vanishing exciton and biexciton ground state emission for small lens-shaped dots is predicted.

0 citations0 reviewsNo code linkedOpen access