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Researcher profile

S. Roddaro

S. Roddaro contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-sciphysics.app-ph

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Published work

4 published item(s)

preprint2019arXiv

Going beyond copper: wafer-scale synthesis of graphene on sapphire

The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Selective control of edge-channel trajectories by scanning gate microscopy

Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of an atomic force microscope is used as a moveable local gate to pilot individual edge channels. Our results are discussed in light of the implementation of multi-edge interferometers.

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preprint2011arXiv

A Josephson Quantum Electron Pump

A macroscopic fluid pump works according to the law of Newtonian mechanics and transfers a large number of molecules per cycle (of the order of 10^23). By contrast, a nano-scale charge pump can be thought as the ultimate miniaturization of a pump, with its operation being subject to quantum mechanics and with only few electrons or even fractions of electrons transfered per cycle. It generates a direct current in the absence of an applied voltage exploiting the time-dependence of some properties of a nano-scale conductor. The idea of pumping in nanostructures was discussed theoretically a few decades ago [1-4]. So far, nano-scale pumps have been realised only in system exhibiting strong Coulombic effects [5-12], whereas evidence for pumping in the absence of Coulomb-blockade has been elusive. A pioneering experiment by Switkes et al. [13] evidenced the difficulty of modulating in time the properties of an open mesoscopic conductor at cryogenic temperatures without generating undesired bias voltages due to stray capacitances [14,15]. One possible solution to this problem is to use the ac Josephson effect to induce periodically time-dependent Andreev-reflection amplitudes in a hybrid normal-superconducting system [16]. Here we report the experimental detection of charge flow in an unbiased InAs nanowire (NW) embedded in a superconducting quantum interference device (SQUID). In this system, pumping may occur via the cyclic modulation of the phase of the order parameter of different superconducting electrodes. The symmetry of the current with respect to the enclosed magnetic flux [17,18] and bias SQUID current is a discriminating signature of pumping. Currents exceeding 20 pA are measured at 250 mK, and exhibit symmetries compatible with a pumping mechanism in this setup which realizes a Josephson quantum electron pump (JQEP).

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preprint2010arXiv

InAs nanowire hot-electron Josephson transistor

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].

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