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Researcher profile

S. Oda

S. Oda contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallastro-phhep-latquant-ph

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Published work

10 published item(s)

preprint2013arXiv

Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots

We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

GHz photon-activated hopping between localized states in a silicon quantum dot

We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Detection of variable tunneling rates in silicon quantum dots

Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots

We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli-blocked transitions, and is attributed to spin-flip cotunneling. Both dip and peak structure show good agreement between theory and experiment.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

Introducing Dynamical Triangulations to the Type IIB Superstrings

In order to consider non-perturbative effects of superstrings, we try to apply dynamical triangulations to the type IIB superstrings. The discretized action is constructed from the type IIB matrix model proposed as a constructive definition of superstring theory. The action has the local N=2 supersymmetry explicitly, and has no extra fermionic degrees of freedom. We evaluate the partition function for some simple configurations and discuss constraints required from the finiteness of partition functions.

0 citations0 reviewsNo code linkedOpen access
preprint1998arXiv

Discovery of TeV Gamma Rays from SN1006: Further Evidence for the SNR Origin of Cosmic Rays

This paper reports the first discovery of TeV gamma-ray emission from a supernova remnant made with the CANGAROO 3.8 m Telescope. TeV gamma rays were detected at the sky position and extension coincident with the north-east (NE) rim of shell-type Supernova remnant (SNR) SN1006 (Type Ia). SN1006 has been a most likely candidate for an extended TeV Gamma-ray source, since the clear synchrotron X-ray emission from the rims was recently observed by ASCA (Koyama et al. 1995), which is a strong evidence of the existence of very high energy electrons up to hundreds of TeV in the SNR. The observed TeV gamma-ray flux was $(2.4\pm 0.5(statistical) \pm 0.7(systematic)) \times 10^{-12}$ cm$^{-2}$ s$^{-1}$ ($\ge 3.0\pm 0.9$ TeV) and $ (4.6\pm 0.6 \pm 1.4) \times 10^{-12}$ cm$^{-2}$ s$^{-1}$ ($\ge 1.7\pm 0.5$ TeV) from the 1996 and 1997 observations, respectively. Also we set an upper limit on the TeV gamma-ray emission from the SW rim, estimated to be $ 1.1 \times 10^{-12}$ cm$^{-2}$ s$^{-1}$ ($\ge 1.7\pm 0.5$ TeV, 95% CL) in the 1997 data. The TeV gamma rays can be attributed to the 2.7 K cosmic background photons up-scattered by electrons of energies up to about 10$^{14}$ eV by the inverse Compton (IC) process. The observed flux of the TeV gamma rays, together with that of the non-thermal X-rays, gives firm constraints on the acceleration process in the SNR shell; a magnetic field of $6.5\pm2$ $μ$G is inferred from both the synchrotron X-rays and inverse Compton TeV gamma-rays, which gives entirely consistent mechanisms that electrons of energies up to 10$^{14}$ eV are produced via the shock acceleration in SN1006.

0 citations0 reviewsNo code linkedOpen access
preprint1998arXiv

TeV gamma-ray observations of southern BL Lacs with the CANGAROO 3.8m Imaging Telescope

Observational and theoretical results indicate that low-redshift BL Lacertae objects are the most likely extragalactic sources to be detectable at TeV energies. In this paper we present the results of observations of 4 BL Lacertae objects (PKS0521-365, EXO0423.4-0840, PKS2005-489 and PKS2316-423) made between 1993 and 1996 with the CANGAROO 3.8m imaging Cherenkov telescope. During the period of these observations the gamma-ray energy threshold of the 3.8m telescope was ~2TeV. Searches for steady long-term emission have been made, and, inspired by the TeV flares detected from Mkn421 and Mkn501, a search on a night-by-night timescale has also been performed for each source. Comprehensive Monte Carlo simulations are used to estimate upper limits for both steady and short timescale emission.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

Very High Energy Gamma Rays from the Vela Pulsar Direction

We have observed the Vela pulsar region at TeV energies using the 3.8 m imaging Cherenkov telescope near Woomera, South Australia between January 1993 and March 1995. Evidence of an unpulsed gamma-ray signal has been detected at the 5.8 sigma level. The detected gamma-ray flux is (2.9 +/- 0.5 +/- 0.4) x 10^-12 photons cm^-2 sec^-1 above 2.5 +/- 1.0 TeV and the signal is consistent with steady emission over the two years. The gamma-ray emission region is offset from the Vela pulsar position to the southeast by about 0.13 deg. No pulsed emission modulated with the pulsar period has been detected and the 95 % confidence flux upper limit to the pulsed emission from the pulsar is (3.7 +/- 0.7) x 10^-13 photons cm^-2 sec^-1 above 2.5 +/- 1.0 TeV.

0 citations0 reviewsNo code linkedOpen access