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S. Molina-Valdovinos

S. Molina-Valdovinos contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices

Magnetic silicene superlattices (MSSLs) are versatile structures with spin-valley polarization and tunneling magnetoresistance (TMR) capabilities. However, the oscillating transport properties related to the superlattice periodicity impede stable spin-valley polarization states reachable by reversing the magnetization direction. Here, we show that aperiodicity can be used to improve the spin-valley polarization and TMR by reducing the characteristic conductance oscillations of periodic MSSLs (P-MSSLs). Using the Landauer-Büttiker formalism and the transfer matrix method, we investigate the spin-valley polarization and the TMR of Fibonacci (F-) and Thue-Morse (TM-) MSSLs as typical aperiodic superlattices. Our findings indicate that aperiodic superlattices with higher disorder provide better spin-valley polarization and TMR values. In particular, TM-MSSLs reduce considerably the conductance oscillations giving rise to two well-defined spin-valley polarization states and a better TMR than F- and P-MSSLs. F-MSSLs also improve the spin-valley polarization and TMR, however they depend strongly on the parity of the superlattice generation.

preprint2021arXiv

Electronic cloaking of confined states in phosphorene junctions

We study the electronic transport of armchair and zigzag gated phosphorene junctions. We find confined states for both direction-dependent phosphorene junctions. In the case of armchair junctions confined states are reflected in the transmission properties as Fabry-Pérot resonances at normal and oblique incidence. In the case of zigzag junctions confined states are invisible at normal incidence, resulting in a null transmission. At oblique incidence Fabry-Pérot resonances are presented in the transmission as in the case of armchair junctions. This invisibility or electronic cloaking is related to the highly direction-dependent pseudospin texture of the charge carriers in phosphorene. Electronic cloaking is also manifested as a series of singular peaks in the conductance and as inverted peaks in the Seebeck coefficient. The characteristics of electronic cloaking are also susceptible to the modulation of the phosphorene bandgap and an external magnetic field. So, electronic cloaking in phosphorene junctions in principle could be tested through transport, thermoelectric or magnetotransport measurements.

preprint2020arXiv

Enhancement of the thermoelectric properties in bilayer graphene structures induced by Fano resonances

Fano and hybrid resonances of bilayer graphene could be attractive for thermoelectric devices. The special profile presented by such resonances could significantly enhance the Seebeck coefficient and the power factor. In this work, we study the thermoelectric properties of bilayer graphene single and double barrier structures. The charge carriers are described as massive chiral particles through an effective Dirac-like Hamiltonian. The Hybrid matrix method, the Landauer-Büttiker formalism and the Cutler-Mott formula are implemented to obtain the transmission, transport and thermoelectric properties, respectively. The Seebeck coefficient and the power factor are analyzed for gapless and gapped single and double barriers. We find that in the energy range where Fano resonances occur, the Seebeck coefficient attains values of tens of mV/K and the power factor reaches values of the order nW/K. Hybrid resonances also sustain high values for the thermoelectric properties, however not as high as Fano resonances. We also find that despite the Fano and hybrid profiles are manifested in the conductance of gapped barrier structures, the Seebeck coefficient and the power factor are systematically reduced as the bandgap gets larger. So, our findings indicate that bilayer graphene barrier structures can be used to improve the response of thermoelectric devices.

preprint2016arXiv

Nonlinear charge transport in bipolar semiconductors due to electron heating

It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which is associated with the electron temperature dependence on the recombination rate. The heating of the charge carriers breaks the balance between generation and recombination, giving rise to nonequilibrium charge carriers concentration and nonlinearity.