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S. Mathew

S. Mathew appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2022arXiv

Vectorial probing of electric and magnetic transitions in variable optical environments and vice-versa

We use europium doped single crystalline NaYF$_4$ nanorods for probing the electric and magnetic contributions to the local density of optical states (LDOS). Reciprocically, we determine intrinsic properties of the emitters (oscillator strength, quantum yield) by comparing their measured and simulated optical responses in front of a mirror. We first experimentally determine the specifications of the nanoprobe (orientation and oscillator strength of the electric and magnetic dipoles moments) and show significant orientation sensitivity of the branching ratios associated with electric and magnetic transitions. In a second part, we measure the modification of the LDOS in front of a gold mirror in a Drexhage's experiment. We discuss the role of the electric and magnetic LDOS on the basis of numerical simulations, taking into account the orientation of the dipolar emitters. We demonstrate that they behave like degenerated dipoles sensitive to polarized partial LDOS.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetism in MoS2 induced by MeV proton irradiation

Molybdenum disulphide, a diamagnetic layered dichalcogenide solid, is found to show magnetic ordering at room temperature when exposed to a 2 MeV proton beam. The temperature dependence of magnetization displays ferrimagnetic behavior with a Curie temperature of 895 K. A disorder mode corresponding to a zone-edge phonon and a Mo valence higher than +4, have been detected in the irradiated samples using Raman and X-ray photoelectron spectroscopy, respectively. The possible origins of long-range magnetic ordering in irradiated MoS2 samples are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Growth of narrow-neck, epitaxial and nearly spherical Ge nanoislands on air-exposed Si(111)-(7$\times$7) surfaces

Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. STM measurements reveal the growth of very small (~2 nm diameter) Ge islands with a high number density of about 1.8\times10^12 cm-2. The island size has been found to depend on the amount of deposited Ge as well as the substrate temperature during Ge deposition. HRXTEM micrographs reveal that the islands are nearly spherical in shape, making narrow-neck contact with the substrate surface. At 520°C growth temperature both epitaxial and non-epitaxial islands grow. However, at 550°C, Ge islands predominantly grow epitaxially by a narrow-contact with Si via voids in the oxide layer. Growth of vertically elongated Ge islands is also observed in HRXTEM measurements with a very small diameter-to-height aspect ratio (~0.5-1), a hitherto unreported feature of epitaxial Ge growth on Si surfaces. In addition, stacking fault and faceting are observed in islands as small as 5 nm diameter. Ge islands, not even in contact with the Si substrate, appear to be in epitaxial alignment with the Si substrate. The island size distribution is essentially monomodal. As the contact area of Ge islands with Si through the voids in the oxide layer can be controlled via growth temperature, the results indicate that tunability of the potential barrier at the interface and consequently the tunability of electronic levels and optical properties can be achieved by the control of growth temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation

The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene layer was supported by a substrate. The thermal properties of graphene as a function of the number of layers or as influenced by the substrate argue against a thermal model for the production of damage by the ion beam. We propose a model of intense electronically-stimulated surface desorption of the atoms as the most likely process for this damage mechanism.

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