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S. Mangin

S. Mangin contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2020arXiv

Determination of the spin Hall angle, spin mixing conductance and spin diffusion length in Ir/CoFeB for spin-orbitronic devices

Iridium is a very promising material for spintronic applications due to its interesting magnetic properties such as large RKKY exchange coupling as well as its large spin-orbit coupling value. Ir is for instance used as a spacer layer for perpendicular synthetic antiferromagnetic or ferrimagnet systems. However, only a few studies of the spintronic parameters of this material have been reported. In this paper, we present inverse spin Hall effect - spin pumping ferromagnetic resonance measurements on CoFeB/Ir based bilayers to estimate the values of the effective spin Hall angle, the spin diffusion length within iridium, and the spin mixing conductance in the CoFeB/Ir bilayer. In order to have reliable results, we performed the same experiments on CoFeB/Pt bilayers, which behavior is well known due to numerous reported studies. Our experimental results show that the spin diffusion length within iridium is 1.3 nm for resistivity of 250 n$Ω$.m, the spin mixing conductance $g_{eff}^{\uparrow \downarrow}$ of the CoFeB/Ir interface is 30 nm$^{-2}$, and the spin Hall angle of iridium has the same sign than the one of platinum and is evaluated at 26% of the one of platinum. The value of the spin Hall angle found is 7.7% for Pt and 2% for Ir. These relevant parameters shall be useful to consider Ir in new concepts and devices combining spin-orbit torque and spin-transfer torque.

preprint2020arXiv

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.

preprint2020arXiv

Engineering Co$_2$MnAl$_x$Si$_{1-x}$ Heusler compounds as a model system to correlate spin polarization, intrinsic Gilbert damping and ultrafast demagnetization

Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond time scale. Here, we use engineered Co2MnAlxSi1-x Heusler compounds to adjust the degree of spin polarization P from 60 to 100% and investigate how it correlates with the damping. We demonstrate experimentally that the damping decreases when increasing the spin polarization from 1.1 10-3 for Co2MnAl with 63% spin polarization to an ultra-low value of 4.10-4 for the half-metal magnet Co2MnSi. This allows us investigating the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1-P and as a consequence to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, our high quality Heusler compounds allow controlling the band structure and therefore the channel for spin angular momentum dissipation.

preprint2020arXiv

Engineering the magnetic and magnetocaloric properties of PrVO3 epitaxial oxide thin films by strain effects

Combining multiple degrees of freedom in strongly-correlated materials such as transition-metal oxides would lead to fascinating magnetic and magnetocaloric features. Herein, the strain effects are used to markedly tailor the magnetic and magnetocaloric properties of PrVO3 thin films. The selection of appropriate thickness and substrate enables us to dramatically decrease the coercive magnetic field from 2.4 T previously observed in sintered PVO3 bulk to 0.05 T for compressive thin films making from the PrVO3 compound a nearly soft magnet. This is associated with a marked enhancement of the magnetic moment and the magnetocaloric effect that reach unusual maximum values of roughly 4.86 uB and 56.8 J/kg K in the magnetic field change of 6 T applied in the sample plane at the cryogenic temperature range (3 K), respectively. This work strongly suggests that taking advantage of different degrees of freedom and the exploitation of multiple instabilities in a nanoscale regime is a promising strategy for unveiling unexpected phases accompanied by a large magnetocaloric effect in oxides.