Researcher profile

S. Leblanc

S. Leblanc contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2021arXiv

X-ray photons produced from a plasma-cathode electron beam for radiation biology applications

A compact low-energy and high-intensity X-ray source for radiation biology applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a beam of 10$^{14}$ electrons at the anode location. An aluminum foil converts a part of the energy of these electrons into X-ray photons which are characterized using filtered imaging plates. The dose that would be deposited by these X-ray photons in C. elegans larvae is calculated from Geant4 simulations. It can be set to a value ranging between 10 $μ$Gy and 10 mGy per laser shot by simply changing the aluminum foil thickness and the diode voltage. Therefore, this versatile and compact X-ray source opens a new path to explore the radiation effects induced by dose rates varying over several orders of magnitude.

preprint2020arXiv

A versatile and compact high-intensity electron beam for multi-kGy irradiation in nano or micro-electronic devices

A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can be deposited into silicon or gallium samples is estimated to be 25 kGy per laser shot. The dose profile strongly depends on the cathode voltage and can be adjusted from 100 nm to 1 $μ$m. With this versatile source, a path is opened to study micro or nano-electronic components under high irradiation, without the standard radioprotection issues.