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S. J. Ray

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Published work

6 published item(s)

preprint2015arXiv

Design and cryogenic operation of a hybrid quantum-CMOS circuit

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (RF) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the RF signal, in good agreement with modeling.

preprint2015arXiv

Single Molecule Transistor based Nanopore for the detection of Nicotine

A nanopore based detection methodology was proposed and investigated for the detection of Nicotine. This technique uses a Single Molecular Transistor (SMT) working as a nanopore operational in the Coulomb Blockade regime. When the Nicotine molecule is pulled through the nanopore area surrounded by the Source(S), Drain(D) and Gate electrodes, the charge stability diagram can detect the presence of the molecule and is unique for a specific molecular structure. Due to the weak coupling between the different electrodes which is set by the nanopore size, the molecular energy states stay almost unaffected by the electrostatic environment that can be realised from the charge stability diagram. Identification of different orientation and position of the Nicotine molecule within the nanopore area can be made from specific regions of overlap between different charge states on the stability diagram that could be used as an electronic fingerprint for detection. This method could be advantageous and useful to detect the presence of Nicotine in smoke which is usually performed using chemical chromatography techniques.

preprint2014arXiv

Double Gated Single Molecular Transistor for Charge Detection

The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's function approach. While the molecule is placed on top of a dielectric layer (backed by a metallic gate) and weakly coupled between the Source/Drain electrodes, the charge stability diagram revealed the presence of individual charge states in the Coulomb Blockade regime. This gets affected significantly on addition of an another gate electrode placed on the top of the molecule. This modified double-gated geometry allows additional control of the total energy of the system that is sensitive to the individual charge states of the molecule which can be used as a charge sensing technique operational at room temperature.

preprint2014arXiv

Muon-spin rotation measurements of the vortex state in Sr$_2$RuO$_4$: type-1.5 superconductivity, vortex clustering and a crossover from a triangular to a square vortex lattice

Muon-spin rotation has been used to probe vortex state in Sr$_2$RuO$_4$. At moderate fields and temperatures a lattice of triangular symmetry is observed, crossing over to a lattice of square symmetry with increasing field and temperature. At lower fields it is found that there are large regions of the sample that are completely free from vortices which grow in volume as the temperature falls. Importantly this is accompanied by {\it increasing} vortex density and increasing disorder within the vortex-cluster containing regions. Both effects are expected to result from the strongly temperature-dependent long-range vortex attractive forces arising from the multi-band chiral-order superconductivity.

preprint2014arXiv

Single atom impurity in a Single Molecular Transistor

The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor (SMT) was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the position of the impurity atom in such devices which together with the charging energy of the molecule could be utilised as an electronic fingerprint for the detection of such impurity states in a nano-electronic device. The two gated geometry allows additional control over the electrostatics as can be seen from the total energy surfaces (for a specific charge state) which is sensitive to the positions of the impurity. These devices which are operational at room temperature can provide significant advantages over the conventional Silicon based single dopant devices functional at low temperature. The present approach could be a very powerful tool for the detection and control of individual impurity atoms in a single molecular device and for applications in future molecular electronics.

preprint2010arXiv

Coherency of the superconducting state: the muon spin rotation and ARPES studies of (BiPb)_2(SrLa)_2CuO_{6+δ}

The superfluid density ρ_s in underdoped (T_c\simeq23K), optimally doped (T_c\simeq35K) and overdoped (T_c\simeq29K) single crystalline (BiPb)_2(SrLa)_2CuO_{6+δ} samples was studied by means of muon-spin rotation (\muSR). By combining the \muSR data with the results of ARPES measurements on similar samples [Nature 457, 296 (2009)] good self-consistent agreement is obtained between two techniques concerning the temperature and the doping evolution of ρ_s.