Source author record

S. H. Park

S. H. Park appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2021arXiv

Measurements of the branching fractions of $Ξ_c^0 \to ΛK_S^0$, $Ξ_c^0 \to Σ^0 K_S^0$, and $Ξ_c^0 \to Σ^+ K^-$ decays at Belle

Using the entire data sample of $980\mathrm{~fb}^{-1}$ collected with the Belle detector at the KEKB asymmetric-energy $e^+e^-$ collider, we present measurements of the branching fractions of the Cabibbo-favored decays $Ξ_c^0 \to ΛK_S^0$, $Ξ_c^0 \to Σ^0 K_S^0$, and $Ξ_c^0 \to Σ^+ K^-$. Taking the decay $Ξ_c^0 \to Ξ^- \pip$ as the normalization mode, we measure the branching fraction ratio ${\cal B}(Ξ_c^0 \to ΛK_S^0)/{\cal B}(Ξ_c^0 \to Ξ^- π^+) = 0.229\pm0.008\pm0.012$ with improved precision, and measure the branching fraction ratios ${\cal B}(Ξ_c^0 \to Σ^0 K_S^0)/{\cal B}(Ξ_c^0 \to Ξ^- π^+) = 0.038\pm0.006\pm0.004$ and ${\cal B}(Ξ_c^0 \to Σ^+ K^-)/{\cal B}(Ξ_c^0 \to Ξ^- π^+) = 0.123\pm0.007\pm0.010$ for the first time. Taking into account the branching fraction of the normalization mode, the absolute branching fractions are determined to be ${\cal B}(Ξ_c^0 \to ΛK_S^0) = (3.27\pm0.11\pm0.17\pm0.73) \times 10^{-3}$, ${\cal B}(Ξ_c^0 \to Σ^0 K_S^0) = (0.54\pm 0.09\pm 0.06\pm 0.12) \times 10^{-3}$, and ${\cal B}(Ξ_c^0 \to Σ^+ K^-) = (1.76\pm 0.10\pm0.14\pm 0.39) \times 10^{-3}$. The first and second uncertainties above are statistical and systematic, respectively, while the third ones arise from the uncertainty of the branching fraction of $Ξ_c^0 \to Ξ^- π^+$.

preprint2014arXiv

Nanoscale Topographical Replication of Graphene Architecture by Artificial DNA nanostructures

Despite many studies on how geometry can be used to control the electronic properties of graphene, certain limitations to fabrication of designed graphene nanostructures exist. Here, we demonstrate controlled topographical replication of graphene by artificial deoxyribonucleic acid (DNA) nanostructures. Owing to the high degree of geometrical freedom of DNA nanostructures, we controlled the nanoscale topography of graphene. The topography of graphene replicated from DNA nanostructures showed enhanced thermal stability and revealed an interesting negative temperature coefficient of sheet resistivity when underlying DNA nanostructures were denatured at high temperatures.

preprint2011arXiv

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, applied fields, and interfaces. An applied field pulls the loosely bound D- electron towards the interface and reduces the charging energy significantly below the bulk values. This enables formation of bound excited D-states in these gated donors, in contrast to bulk donors. A detailed quantitative comparison of the charging energies with transport spectroscopy measurements with multiple samples of arsenic donors in ultra-scaled FinFETs validates the model results and provides physical insights. We also report measured D-data showing for the first time the presence of bound D-excited states under applied fields.