Researcher profile

S. H. Jhang

S. H. Jhang contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2012arXiv

Magnetotransport through graphene nanoribbons at high magnetic fields

We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and several types of disorder. In experiment, at high carrier densities we observe Shubnikov-de Haas oscillations and the quantum Hall effect, while at low densities the oscillations disappear and an initially negative magnetoresistance becomes strongly positive at high magnetic fields. The strong resistance increase at very high fields and low carrier densities is tentatively ascribed to a field-induced insulating state in the bulk graphene leads. Comparing numerical results and experiment, we demonstrate that at least edge disorder and bulk short-range impurities are important in our samples.

preprint2012arXiv

Supercollision cooling in undoped graphene

Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed out in Ref. \onlinecite{Song2012PRL}, this is the case in undoped graphene where the small Fermi surface drastically restricts the allowed phonon energy in ordinary collisions. Using electrical heating and sensitive noise thermometry we report on SC-cooling in diffusive monolayer graphene. At low carrier density and high phonon temperature the Joule power $P$ obeys a $P\propto T_e^3$ law as a function of electronic temperature $T_e$. It overrules the linear law expected for ordinary collisions which has recently been observed in resistivity measurements. The cubic law is characteristic of SCs and departs from the $T_e^4$ dependence recently reported for metallic graphene below the Bloch-Grüneisen temperature. These supercollisions are important for applications of graphene in bolometry and photo-detection.

preprint2011arXiv

Stacking-order dependent transport properties of trilayer graphene

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν= 2, 4, 6... with a step of Δν= 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at ν= 6 and 10 with 4-fold spin and valley degeneracy.

preprint2010arXiv

Direct observation of band-gap closure for a semiconducting carbon nanotube in a large parallel magnetic field

We have investigated the magnetoconductance of semiconducting carbon nanotubes (CNTs) in pulsed, parallel magnetic fields up to 60 T, and report the direct observation of the predicted band-gap closure and the reopening of the gap under variation of the applied magnetic field. We also highlight the important influence of mechanical strain on the magnetoconductance of the CNTs.

preprint2010arXiv

Spin-orbit interaction in chiral carbon nanotubes probed in pulsed magnetic fields

The magneto-conductance of an open carbon nanotube (CNT)-quantum wire was measured in pulsed magnetic fields. At low temperatures we find a peculiar split magneto-conductance peak close to the charge neutrality point. Our analysis of the data reveals that this splitting is intimately connected to the spin-orbit interaction and the tube chirality. Band structure calculations suggest that the current in the peak regions is highly spin-polarized, which calls for application in future CNT-based spintronic devices.