Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films
Helical magnets are emerging as a novel class of materials for spintronics and sensor applications; however, research on their charge and spin transport properties in a thin film form is less explored. Herein, we report the temperature and magnetic field dependent charge transport properties of a highly crystalline MnP nanorod thin film over a wide temperature range (2-350 K). The MnP nanorod films of 100 nm thickness were grown on Si substrates at 500 oC using molecular beam epitaxy. The temperature dependent resistivity data exhibits a metallic behavior over the entire measured temperature range. However, large negative magnetoresistance of up to 12% is observed below 50 K at which the system enters a stable helical (screw) magnetic state. In this temperature regime, the MR(H,T) dependence seems to show a magnetic field manipulated phase coexistence. The observed magnetoresistance is dominantly governed by the intergranular spin dependent tunneling mechanism. These findings pinpoint a correlation between the transport and magnetism in this helimagnetic system.