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S. Buvaev

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cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.mes-hall

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preprint2014arXiv

Transport measurements of the spin wave gap of thin Mn films

Temperature dependent transport measurements on ultrathin antiferromagnetic Mn films reveal a heretofore unknown non-universal weak localization correction to the conductivity which extends to disorder strengths greater than 100 k$Ω$ per square. The inelastic scattering of electrons off of gapped antiferromagnetic spin waves gives rise to an inelastic scattering length which is short enough to place the system in the 3d regime. The extracted fitting parameters provide estimates of the energy gap ($Δ= 16$ K) and exchange energy ($\bar{J} = 320$ K).

preprint2014arXiv

Unusual Shubnikov-de Haas oscillations in BiTeCl

We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(ω)\right)$ and Hall effect; we propose that the two frequencies correspond respectively to the inner and outer Fermi sheets of the Rashba spin-split bulk conduction band. The bulk carrier concentration was $n_{e}\approx1\times10^{19}$ cm$^{-3}$ and the effective masses $m_{1}^{*}=0.20 m_{0}$ for the inner and $m_{2}^{*}=0.27 m_{0}$ for the outer sheet. Surprisingly, despite its low effective mass, we found that the amplitude of $F_{2}$ is very rapidly suppressed with increasing temperature, being almost undetectable above $T\approx4$ K.

preprint2013arXiv

Bulk Fermi surface and electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$

The electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k^{c}_{F}/k^{ab}_{F}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi$_{2}$Se$_{3}$, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi$_{2}$Se$_{3}$. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by X-ray diffraction measurements, where a significant increase of microstrain was found in Cu$_{0.07}$Bi$_{2}$Se$_{3}$, compared to Bi$_{2}$Se$_{3}$.

preprint2012arXiv

Temperature dependent infrared spectroscopy of the Rashba spin-splitting semiconductor BiTeI

We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with spin-split electronic bands. In addition, we report a low energy intraband transition with an onset energy of about 40 meV and an unexpectedly large number of vibrational modes in the far-infrared spectral region. At least some of the modes have asymmetric Fano line-shape. These new observations cannot be explained considering only the bulk band structure or crystal symmetry of BiTeI, and we proposed that the optical response is also affected by the surface topology.