Researcher profile

S. Assa Aravindh

S. Assa Aravindh contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall physics.atm-clus physics.chem-ph

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preprint2016arXiv

Nature of low dimensional structural modulations and relative phase stability in MoS2/WS2-ReS2 transition metal dichalcogenide alloys

We report on the various types of Peierls like two dimensional structural modulations and relative phase stability of 2H and 1T poly-types in MoS2-ReS2 and WS2-ReS2 alloy system. Theoretical calculation predicts a polytype phase transition cross over at ~50 at.% of Mo and W in ReS2 in both monolayer and bulk form, respectively. Experimentally, two different types of structural modulations at 50% and a modulation corresponding to trimerization at 75% alloy composition is observed for MoS2-ReS2 and only one type of modulation is observed at 50% WS2-ReS2 alloy system. The 50% alloy system is found to be a suitable monolithic candidate for metal semiconductor transition with minute external perturbation. ReS2 is known to be in 2D Peierls distorted 1Td structure and forms a chain like superstructure. Incorporation of Mo and W atoms in the ReS2 lattice modifies the metal-metal hybridization between the cations and influences the structural modulation and electronic property of the system. The results offer yet another effective way to tune the electronic structure and poly-type phases of this class of materials other than intercalation, strain, and vertical stacking arrangement.

preprint2015arXiv

Defect induced d0 ferromagnetism in a ZnO grain boundary

Several experimental studies have referred to the grain boundary (GB) defect as the origin of the ferromagnetism in ZnO. However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the GGA+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. Unlike O vacancy (VO), Zn vacancy (VZn) is preferentially aggregated at the GB, relative to the bulk-like region, indicating the possibility of obtaining p-type conductivity in polycrystalline ZnO. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB. Ferromagnetic exchange energy > 150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0 semiconductors.

preprint2013arXiv

Studies of FemIrn nano clusters using Density Functional Theory Techniques

The structure, binding energy, magnetic moments and electronic structure of FemIrn clusters are investigated using state of the art density functional theory techniques. Fully unconstrained structural relaxations are undertaken by considering all possible non equivalent cluster structures. The optimized clusters are all compact, indicating a clear tendency to maximize the number of nearest neighbour Fe-Ir pairs. The binding energy shows an increment with cluster size. All the clusters preserve ferromagnetic order after optimization. The average magnetic moment generally shows an increase with Fe concentration. The spin polarized density of states is largely dominated by the contribution of d orbitals. An important enhancement of the local Fe moments in an Ir rich environment is observed due to the charge transfer between Fe and Ir. On the other hand, the Ir moments are already large in the pure Ir clusters and does not show significant enhancement with Fe doping. The HOMO-LUMO gaps show a general reduction with alloying, indicating more metallicity for the doped clusters than the pure ones.