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Source author record

Rui-Qiang Wang

Rui-Qiang Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.quant-gas

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Published work

7 published item(s)

preprint2021arXiv

Non-linear antidamping spin-orbit torque originating from intra-band transport on the warped surface of a topological insulator

Motivated by recent experiments observing a large antidamping spin-orbit torque (SOT) on the surface of a three-dimensional topological insulator, we investigate the origin of the current-induced SOT beyond linear-response theory. We find that a strong antidamping SOT arises from intraband transitions in non-linear response, and does not require interband transitions as is the case in linear transport mechanisms. The joint effect of warping and an in-plane magnetization generates a non-linear antidamping SOT which can exceed the intrinsic one by several orders of magnitude, depending on warping parameter and the position of Fermi energy, and exhibits a complex dependence on the azimuthal angle of the magnetization. This nonlinear SOT provides an alternative explanation of the observed giant SOT in recent experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrically tunable Kondo effect as a direct measurement of the chiral anomaly in disorder Weyl semimetals

We propose a mechanism to directly measure the chiral anomaly in disorder Weyl semimetals (WSMs) by the Kondo effect. We find that in a magnetic and electric field driven WSM, the locations of the Kondo peaks can be modulated by the chiral chemical potential, which is proportional to $\mathbf{E}\cdot \mathbf{B}$. The Kondo peaks come from spin fluctuations within the impurities, which apart from the temperature, relate closely to the host's Fermi level. In WSMs, the chiral-anomaly-induced chirality population imbalance will shift the local Fermi levels of the paired Weyl valleys toward opposite directions in energy, and then affects the Kondo effect. Consequently, the Kondo effect can be tunable by an external electric field via the chiral chemical potential. This is unique to the chiral anomaly. Base on this, we argue that the electrically tunable Kondo effect can serve as a direct measurement of the chiral anomaly in WSMs. The Kondo peaks are robust against the disorder effect and therefore, the signal of the chiral anomaly survives for a relatively weak magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Finite-key analysis for twin-field quantum key distribution based on generalized operator dominance condition

Quantum key distribution (QKD) can help two distant peers to share secret key bits, whose security is guaranteed by the law of physics. In practice, the secret key rate of a QKD protocol is always lowered with the increasing of channel distance, which severely limits the applications of QKD. Recently, twin-field (TF) QKD has been proposed and intensively studied, since it can beat the rate-distance limit and greatly increase the achievable distance of QKD. Remarkalebly, K. Maeda et. al. proposed a simple finite-key analysis for TF-QKD based on operator dominance condition. Although they showed that their method is sufficient to beat the rate-distance limit, their operator dominance condition is not general, i.e. it can be only applied in three decoy states scenarios, which implies that its key rate cannot be increased by introducing more decoy states, and also cannot reach the asymptotic bound even in case of preparing infinite decoy states and optical pulses. Here, to bridge this gap, we propose an improved finite-key analysis of TF-QKD through devising new operator dominance condition. We show that by adding the number of decoy states, the secret key rate can be furtherly improved and approach the asymptotic bound. Our theory can be directly used in TF-QKD experiment to obtain higher secret key rate. Our results can be directly used in experiments to obtain higher key rates.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin helical states and spin transport of the line defect in silicene lattice

We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin-orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near to the line defect and move backward on the other side, and vice verse for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Topologically trivial and nontrivial edge bands in graphene induced by irradiation

We proposed a minimal model to describe the Floquet band structure of two-dimensional materials with light-induced resonant inter-band transition. We applied it to graphene to study the band features caused by the light irradiation. Linearly polarized light induces pseudo gaps (gaps are functions of wavevector), and circularly polarized light causes real gaps on the quasi-energy spectrum. If the polarization of light is linear and along the longitudinal direction of zigzag ribbons, flat edge bands appear in the pseudo gaps, and if is in the lateral direction of armchair ribbons, curved edge bands can be found. For the circularly polarized cases, edge bands arise and intersect in the gaps of both types of ribbons. The edge bands induced by the circularly polarized light are helical and those by linearly polarized light are topologically trivial ones. The Chern number of the Floquet band, which reflects the number of pairs of helical edge bands in graphene ribbons, can be reduced into the winding number at resonance.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Valley detection using a graphene gradual pn junction with spin-orbit coupling: an analytical conductance calculation

Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we analytically calculated that pn conductance with the spin-orbit coupling and stagger potential taken into account. Our analytical expression indicates that the energy gap causes the conductance to drop a constant value with respect to that without gap in a certain parameter region, and manifests that the curve of the conductance versus the stagger potential consists of two Gaussian peaks -- one valley contributes one peak. The latter feature allows one to detect the valley polarization without using double-interface resonant devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Valley-dependent gauge fields for ultracold atoms in square optical superlattices

We propose an experimental scheme to realize the valley-dependent gauge fields for ultracold fermionic atoms trapped in a state-dependent square optical lattice. Our scheme relies on two sets of Raman laser beams to engineer the hopping between adjacent sites populated by two-component fermionic atoms. One set of Raman beams are used to realize a staggered π-flux lattice, where low energy atoms near two inequivalent Dirac points should be described by the Dirac equation for spin-1/2 particles. Another set of laser beams with proper Rabi frequencies are added to further modulate the atomic hopping parameters. The hopping modulation will give rise to effective gauge potentials with opposite signs near the two valleys, mimicking the interesting strain-induced pseudo-gauge fields in graphene. The proposed valley-dependent gauge fields are tunable and provide a new route to realize quantum valley Hall effects and atomic valleytronics.

0 citations0 reviewsNo code linkedOpen access