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Researcher profile

Roy W. Chantrell

Roy W. Chantrell contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phcond-mat.mes-hall

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Published work

5 published item(s)

preprint2022arXiv

Models of Advance Recording Systems: A Multi-timescale Micromagnetic code for granular thin film magnetic recording systems

Micromagnetic modelling provides the ability to simulate large magnetic systems accurately without the computational cost limitation imposed by atomistic modelling. Through micromagnetic modelling it is possible to simulate systems consisting of thousands of grains over a time range of nanoseconds to years, depending upon the solver used. Here we present the creation and release of an open-source multi-timescale micromagnetic code combining three key solvers: Landau-Lifshitz-Gilbert; Landau-Lifshitz-Bloch; Kinetic Monte Carlo. This code, called MARS (Models of Advanced Recording Systems), is capable of accurately simulating the magnetisation dynamics in large and structurally complex single- and multi-layered granular systems. The short timescale simulations are achieved for systems far from and close to the Curie point via the implemented Landau-Lifshitz-Gilbert and Landau-Lifshitz-Bloch solvers respectively. This enables read/write simulations for general perpendicular magnetic recording and also state of the art heat assisted magnetic recording (HAMR). The long timescale behaviour is simulated via the Kinetic Monte Carlo solver, enabling investigations into signal-to-noise ratio and data longevity. The combination of these solvers opens up the possibility of multi-timescale simulations within a single software package. For example the entire HAMR process from initial data writing and data read back to long term data storage is possible via a single simulation using MARS. The use of atomistic parameterisation for the material input of MARS enables highly accurate material descriptions which provide a bridge between atomistic simulation and real world experimentation. Thus MARS is capable of performing simulations for all aspects of recording media research and development. This ranges from material characterisation and optimisation to system design and implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Role of Element-Specific Damping on the Ultrafast, Helicity-Independent All-Optical Switching Dynamics in Amorphous (Gd,Tb)Co Thin Films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (\textit{a}-) rare earth-transition metal (\textit{a}-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic \textit{a}-Gd$_{22-x}$Tb$_x$Co$_{78}$ thin films, from x = 0 to x = 18, and elucidate the role of Gd in HI-AOS in \textit{a}-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with $L = 0$) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing \textit{a}-Gd$_{10}$Tb$_{12}$Co$_{78}$ leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that acounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin wave excitations in exchange biased IrMn/CoFe bilayers

Using an atomistic spin model, we have simulated spin wave injection and propagation into antiferromagnetic IrMn from an exchange coupled CoFe layer. The spectral characteristics of the exited spin waves have a complex beating behavior arising from the non-collinear nature of the antiferromagnetic order. We find that the frequency response of the system depends strongly on the strength and frequency of oscillating field excitations. We also find that the strength of excited spin waves strongly decays away from the interfacial layer with a frequency dependent attenuation. Our findings suggest that spin waves generated by coupled ferromagnets are too weak to reverse IrMn in their entirety even with resonant excitation of a coupled ferromagnet. However, efficient spin wave injection into the antiferromagnet is possible due to the non-collinear nature of the IrMn spin ordering.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The origin of exchange bias in multigranular non-collinear IrMn$_3$/CoFe thin films

Antiferromagnetic spintronic devices have the potential to outperform conventional ferromagnetic devices due to their ultrafast dynamics and high data density. A challenge in designing these devices is the control and detection of the orientation of the anti-ferromagnet. One of the most promising ways to achieve this is through the exchange bias effect. This is of particular importance in large scale multigranular devices. Due to the large system sizes, previously, only micromagnetic simulations have been possible, these have an assumed distribution of antiferromagnetic anisotropy directions. Here, we use an atomistic model where the distribution of antiferromagnetic anisotropy directions occurs naturally and the exchange bias occurs due to the intrinsic disorder in the antiferromagnet. We perform large scale simulations, generating realistic values of exchange bias. We find a strong temperature dependance of the exchange bias, which approaches zero at the blocking temperature while the coercivity has a peak at the blocking temeprature due to the superparamagnetic flipping of the antiferromagnet during the hysteresis loop. We find a large discrepancy between the exchange bias predicted from a geometric model of the antiferromagnetic interface indicating the importance of grain edge effects in multigranular exchange biased systems. The grain size dependence shows the expected peak due to a competition between the superparamagnetic nature of small grains and reduction in the statistical imbalance in the number of interfacial spins for larger grain sizes. Our simulations confirm the existence of single antiferromagnetic domains within each grain. The model gives insights into the physical origin of exchange bias and provides a route to developing optimised nanoscale antiferromagnetic spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots

The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs) have been proposed as candidates to replace the current technology due to their non-volatility, high thermal stability and efficient operational performance. Understanding the size and temperature dependence of the energy barrier and the nature of the transition mechanism across the barrier between stable configurations is a key issue in the development of MRAM. Here we use an atomistic spin model to study the energy barrier to reversal in CoFeB/MgO nanodots to determine the effects of size, temperature and external field. We find that for practical device sizes in the 10-50 nm range the energy barrier has a complex behaviour characteristic of a transition from a coherent to domain wall driven reversal process. Such a transition region is not accessible to simple analytical estimates of the energy barrier preventing a unique theoretical calculation of the thermal stability. The atomistic simulations of the energy barrier give good agreement with experimental measurements for similar systems which are at the state of the art and can provide guidance to experiments identifying suitable materials and MTJ stacks with the desired thermal stability.

0 citations0 reviewsNo code linkedOpen access