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Rong Shan

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Published work

7 published item(s)

preprint2026arXiv

Contexting as Recommendation: Evolutionary Collaborative Filtering for Context Engineering

Large Language Models (LLMs) are highly sensitive to their input contexts, motivating the development of automated context engineering. However, existing methods predominantly treat this as a global search problem, seeking a single context strategy that maximizes average performance across a dataset. This restrictive assumption overlooks the fact that different inputs often require distinct guidance, leaving substantial instance-level performance gains untapped. In this paper, we propose a paradigm shift by formulating context engineering as a recommendation problem. We introduce \textbf{Neural Collaborative Context Engineering (NCCE)}, a framework that transitions optimization from a static global search to dynamic, instance-wise routing. NCCE first bootstraps a diverse catalog of anchor contexts and then employs a novel \textbf{Context-CF Co-Evolution} mechanism. This stage establishes a synergistic feedback loop: a lightweight Neural Collaborative Filtering (NCF) model learns instance-context preferences to guide the generation of specialized context variants, while the newly evaluated contexts continuously refine the NCF model's understanding of latent preferences. At inference time, the trained NCF model acts as a context router, dynamically assigning the most suitable context strategy to each unseen instance. Theoretical Proofs and comprehensive experiments demonstrate that by matching individual inputs with their optimal contexts, NCCE significantly improves task accuracy, highlighting the critical importance of personalization in LLM context engineering.

preprint2026arXiv

Position: Academic Conferences are Potentially Facing Denominator Gaming Caused by Fully Automated Scientific Agents

The implicit policy of maintaining relatively stable acceptance rates at top AI conferences, despite exponentially growing submissions, introduces a critical structural vulnerability. This position paper characterizes a new systemic threat we term Agentic Denominator Gaming, in which a malicious actor deploys AI agents to generate and submit a large volume of superficially plausible but low-quality papers. Crucially, their objective is not the acceptance of low-quality papers, but rather to inflate the submission denominator and overwhelm reviewing capacity. Under a relatively stable acceptance rate, this dilution can systematically increase the publication probability of a small, targeted set of legitimate papers. We analyze the practical feasibility of this threat and its broader consequences, including intensified reviewer burnout, degraded review quality, and the emergence of industrialized automated agent mills. Finally, we propose and evaluate a range of mitigation strategies, and argue that durable protection will require system-level policy and incentive reforms, rather than relying primarily on technical detection alone.

preprint2015arXiv

Redefinition of spin Hall magnetoresistance

Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces of the film sample, which corresponds to different resistance states of polarized electron flow with various spin directions relative to the applied magnetic field ($\mathbf{H}$), and brings about the SMR effect finally. The magnetic insulator layer, such as yttrium iron garnet (YIG), is not a requisite for the observation of SMR. Instead, the SMR effect is perfectly realized, with an order of magnitude increase, in the sample with a discontinuous layer of isolated-Co$_2$FeAl (0.3 nm) grains covered by 2.5-nm-thick Pt layer on MgO substrate. The model intuitively gives the typical relationship of SMR effect, i.e. $ρ_{\parallel}\approxρ_{\bot}>ρ_{T}$, where $ρ_{\bot}$, $ρ_{\parallel}$ and $ρ_{T}$ are longitudinal reisitivities with applied magnetic field ($\mathbf{H}$) direction perpendicular to the current direction out of plane (as Z direction), parallel with and perpendicular to it in plane (as X and Y direction), respectively. Our research reveals that the scattering between polarized and nonpolarized conduction electrons is the origin of SMR, and the intrinsic SMR is not constant when $\mathbf{H}$ direction rotates in XZ plane, which is distinct from that in the reported SMR mechanism.

preprint2013arXiv

Proximity effect of spin orbit coupling in Pt/Co2FeAl and Pt/Permalloy bilayers_810571

Proximity effect of spin orbit coupling is investigated through anomalous Hall effect in Pt/Co2FeAl and Pt/Permalloy bilayers. A series of nontrivial magnetotransport behaviors, resulting from a strong impact of phonons on skew scattering, is observed in these films with ultrathin ferromagnetic layers. The parameters representing skew scattering, side jump and intrinsic contributions are dramatically enhanced when the ferromagnetic layer is very thin, and they have clear linear dependences on the reciprocal of ferromagnetic layer thickness, indicating a powerful influence of Pt/Ferromagnet interface. Further study on Cu/Co2FeAl and Ta/Co2FeAl bilayers reveals that a simple interface scattering without intense spin orbit coupling is not sufficient to trigger such a phenomenon. The proximity effect of spin orbit coupling is thus suggested to occur at the Pt/Ferromagnet interface, and as a result quite large anomalous Hall angle (0.036) and Nernst angle (0.23) are confirmed in the Pt/CFA films at room temperature.

preprint2012arXiv

A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using WIEN2k and a narrow indirect band gap of width 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard X-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi.

preprint2012arXiv

Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100)

Thin films of the proposed topological insulator PdLuBi - a Heusler compound with the C1b structure - were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets. Epitaxial growth of high-quality PdLuBi films was confirmed by X-ray spectrometry and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, although the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the PdLuBi films, observed by hard X-ray photoelectron spectroscopy, correspond perfectly to the ab-initio-calculated density of states.

preprint2012arXiv

Fabrication and characterization of semiconducting half Heusler YPtSb thin films

The semiconducting half Heusler compound YPtSb was predicted theoretically to be capable of changing into topological insulator under proper strain. In this work, p type semiconducting half-Heusler YPtSb thin films were prepared by magnetron co-sputtering method from a specially designed target for the first time. Textured structure with (111) plane paralleling with (001) of MgO substrate was observed when YPtSb thin films were grown on MgO (100) substrate at 600°C.Electrical measurements show that the resistivity of YPtSb films decreases with increasing temperature, indicating a semiconductor-like behavior. The carrier density is as high as 1.15 X 10^21 cm-3 at 300 K. The band gap of YPtSb thin films obtained by infrared spectroscopy is around 0.1 - 0.15 eV, which is well in agreement with the theoretical prediction and the value measured in bulk YPtSb.