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Roman Sordan

Roman Sordan contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2016arXiv

Suspended Monolayer Graphene under True Uniaxial Deformation

2D crystals, such as graphene, exhibit the higher strength and stiffness of any other known man-made or natural material. So far, this assertion has been primarily based on modelling predictions and on bending experiments in combination with pertinent modelling. True uniaxial loading of suspended graphene is not easy to accomplish; however such an experiment is of paramount importance in order to assess the intrinsic properties of graphene without the influence of an underlying substrate. In this work we report on uniaxial tension of graphene up to moderate strains of 0.8% ca.. This has been made possible by sandwiching the graphene flake between two polymethylmethacrylate (PMMA) layers and by suspending its central part by the removal of a section of PMMA with e-beam lithography. True uniaxial deformation is confirmed by the measured large phonon shifts with strain by Raman spectroscopy and the indication of lateral buckling (similar to what is observed for thin macroscopic membranes under tension). Finally, we also report on how the stress is transferred to the suspended specimen through the adhesive grips and determine the value of interfacial shear stress that is required for efficient axial loading in such a system.

preprint2014arXiv

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge trapping mechanisms. Pulsed operation leads to hysteresis-free I-V characteristics, which are studied with pulses as short as 75 ns and 150 ns at the drain and gate, respectively. The pulsed operation enables reliable extraction of GFET intrinsic transconductance and mobility values independent of sweep direction, which are up to a factor of two higher than those obtained from simple DC characterization. We also observe drain-bias-induced charge trapping effects at lateral fields greater than 0.1 V/um. In addition, using modeling and capacitance-voltage measurements we extract charge trap densities up to 10^12 1/cm^2 in the top gate dielectric (here Al2O3). Our study illustrates important time- and field-dependent imperfections of top-gated GFETs with high-k dielectrics, which must be carefully considered for future developments of this technology

preprint2010arXiv

Nanolithographic templates using diblock copolymer films on chemically heterogeneous substrates

The orientation of the lamellae formed by the phase separation of symmetric diblock copolymer thin films is strongly affected by the wetting properties of the polymer blocks with respect to the substrate. On bare silicon wafers the lamellae of polystyrene-b-polymethylmethacrylate thin films tend to order parallel to the wafer surface, with the polymethylmethacrylate block preferentially wetting silicon. We have developed a methodology for inducing the arrangement of lamellae perpendicular to the substrate by using chemically modified substrates. This is done by chemisorbing a self-assembled monolayer of thiol-terminated alkane chains on thin gold films deposited on silicon wafers. We also show that it is possible to spatially control the perpendicular orientation of the lamellae at sub-micron length scales by using simple chemical patterns and etch them, in order to produce nanolithographic templates. This method may be of great technological interest for the preparation of well-defined templates using block copolymer thin films.