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Roberto Rosati

Roberto Rosati appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

11 published item(s)

preprint2024arXiv

Circumventing the polariton bottleneck via dark excitons in 2D semiconductors

Efficient scattering into the exciton polariton ground state is a key prerequisite for generating Bose-Einstein condensates and low-threshold polariton lasing. However, this can be challenging to achieve at low densities due to the polariton bottleneck effect that impedes phonon-driven scattering into low-momentum polariton states. The rich exciton landscape of transition metal dichalcogenides (TMDs) provides potential intervalley scattering pathways via dark excitons to rapidly populate these polaritons. Here, we present a microscopic study exploring the time- and momentum-resolved relaxation of exciton polaritons supported by a \ce{MoSe2} monolayer integrated within a Fabry-Perot cavity. By exploiting phonon-assisted transitions between momentum-dark excitons and the lower polariton branch, we demonstrate that it is possible to circumvent the bottleneck region and efficiently populate the polariton ground state. Furthermore, this intervalley pathway is predicted to give rise to, yet unobserved, angle-resolved phonon sidebands in low-temperature photoluminescence spectra that are associated with momentum-dark excitons. This represents a distinctive experimental signature for efficient phonon-mediated polariton-dark-exciton interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Microscopic modelling of exciton-polariton diffusion coefficients in atomically thin semiconductors

In the strong light-matter coupling regime realized e.g. by integrating semiconductors into optical microcavities, polaritons as new hybrid light-matter quasi-particles are formed. The corresponding change in the dispersion relation has a large impact on optics, dynamics and transport behaviour of semiconductors. In this work, we investigate the strong-coupling regime in hBN-encapsulated MoSe$_2$ monolayers focusing on exciton-polariton diffusion. Applying a microscopic approach based on the exciton density matrix formalism combined with the Hopfield approach, we predict a drastic increase of the diffusion coefficients by two to three orders of magnitude in the strong coupling regime. We explain this behaviour by the much larger polariton group velocity and suppressed polariton-phonon scattering channels with respect to the case of bare excitons. Our study contributes to a better microscopic understanding of polariton diffusion in atomically thin semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Signatures of dark excitons in exciton-polariton optics of transition metal dichalcogenides

Integrating 2D materials into high-quality optical microcavities opens the door to fascinating many-particle phenomena including the formation of exciton-polaritons. These are hybrid quasi-particles inheriting properties of both the constituent photons and excitons. In this work, we investigate the so-far overlooked impact of dark excitons on the momentum-resolved absorption spectra of hBN-encapsulated WSe$_2$ and MoSe$_2$ monolayers in the strong-coupling regime. In particular, thanks to the efficient phonon-mediated scattering of polaritons into energetically lower dark exciton states, the absorption of the lower polariton branch in WSe$_2$ is much higher than in MoSe$_2$. It shows unique step-like increases in the momentum-resolved profile indicating opening of specific scattering channels. We study how different externally accessible quantities, such as temperature or mirror reflectance, change the optical response of polaritons. Our study contributes to an improved microscopic understanding of exciton-polaritons and their interaction with phonons, potentially suggesting experiments that could determine the energy of dark exciton states via momentum-resolved polariton absorption.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exciton diffusion in monolayer semiconductors with suppressed disorder

Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations due to a high sensitivity to the immediate environment. Here, we take advantage of the encapsulation of individual layers in hexagonal boron nitride to strongly suppress environmental disorder. Diffusion of excitons is then directly monitored using time- and spatially-resolved emission microscopy at ambient conditions. We consistently find very efficient propagation with linear diffusion coefficients up to 10\,cm$^2$/s, corresponding to room temperature effective mobilities as high as 400\,cm$^2$/Vs as well as a correlation between rapid diffusion and short population lifetime. At elevated densities we detect distinct signatures of many-particle interactions and consequences of strongly suppressed Auger-like exciton-exciton annihilation. A combination of analytical and numerical theoretical approaches is employed to provide pathways towards comprehensive understanding of the observed linear and non-linear propagation phenomena. We emphasize the role of dark exciton states and present a mechanism for diffusion facilitated by free electron hole plasma from entropy-ionized excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-dependent exciton diffusion in transition metal dichalcogenides

Monolayers of transition metal dichalcogenides (TMDs) have a remarkable excitonic landscape with deeply bound bright and dark exciton states. Their properties are strongly affected by lattice distortions that can be created in a controlled way via strain. Here, we perform a joint theory-experiment study investigating exciton diffusion in strained tungsten disulfide (WS$_2$) monolayers. We reveal a non-trivial and non-monotonic influence of strain. Lattice deformations give rise to different energy shifts for bright and dark excitons changing the excitonic landscape, the efficiency of intervalley scattering channels, and the weight of single exciton species to the overall exciton diffusion. We predict a minimal diffusion coefficient in unstrained WS$_2$ followed by a steep speed-up by a factor of 3 for tensile biaxial strain at about 0.6\% strain - in excellent agreement with our experiments. The obtained microscopic insights on the impact of strain on exciton diffusion are applicable to a broad class of multi-valley 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Negative excitonic diffusion in transition metal dichalcogenides

While exciton relaxation in transition metal dichalcogenides (TMDs) has been intensively studied, spatial exciton propagation has received only little attention - in spite of being a key process for optoelectronics and having already shown interesting unconventional behaviours (e.g. spatial halos). Here, we study the spatiotemporal dynamics in TMDs and track the way of optically excited excitons in time, momentum, and space. In particular, we investigate the temperature-dependent exciton diffusion including the remarkable exciton landscape constituted by bright and dark states. Based on a fully quantum mechanical approach, we show at low temperatures an unexpected negative transient diffusion. This phenomenon can be traced back to the existence of dark exciton states in TMDs and is a result of an interplay between spatial exciton diffusion and intervalley exciton-phonon scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dispersionless propagation of electron wavepackets in single-walled carbon nanotubes

We investigate the propagation of electron wavepackets in single-walled carbon nanotubes via a Lindblad-based density-matrix approach that enables us to account for both dissipation and decoherence effects induced by various phonon modes. We show that, while in semiconducting nanotubes the wavepacket experiences the typical dispersion of conventional materials, in metallic nanotubes its shape remains essentially unaltered, even in the presence of the electron-phonon coupling, up to micron distances at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Derivation of nonlinear single-particle equations via many-body Lindblad superoperators: A density-matrix approach

A recently proposed Markov approach provides Lindblad-type scattering superoperators, which ensure the physical (positive-definite) character of the many-body density matrix. We apply the mean-field approximation to such many-body equation, in the presence of one- and two-body scattering mechanisms, and we derive a closed equation of motion for the electronic single-particle density matrix, which turns out to be non-linear as well as non-Lindblad. We prove that, in spite of its nonlinear and non-Lindblad structure, the mean-field approximation does preserve the positive-definite character of the single-particle density matrix, an essential prerequisite of any reliable kinetic treatment of semiconductor quantum devices. This result is in striking contrast with conventional (non-Lindblad) Markov approaches, where the single-particle mean-field equations can lead to positivity violations and to unphysical results. Furthermore, the proposed single-particle formulation is extended to the case of quantum systems with spatial open boundaries, providing a formal derivation of a recently proposed density-matrix treatment based on a Lindblad-like system-reservoir scattering superoperator.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum diffusion due to scattering non-locality in nanoscale semiconductors

In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By employing a density-matrix simulation strategy recently proposed, we shall demonstrate its power and flexibility in describing quantum-diffusion phenomena in nanoscale semiconductors. In particular, as for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis will show the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Scattering nonlocality in quantum charge transport: Application to semiconductor nanostructures

Our primary goal is to provide a rigorous treatment of scattering nonlocality in semiconductor nanostructures. On the one hand, starting from the conventional density-matrix formulation and employing as ideal instrument for the study of the semiclassical limit the well-known Wigner-function picture, we shall perform a fully quantum-mechanical derivation of the space-dependent Boltzmann equation. On the other hand, we shall examine the validity limits of such semiclassical framework, pointing out, in particular, regimes where scattering-nonlocality effects may play a relevant role; to this end we shall supplement our analytical investigation with a number of simulated experiments, discussing and further expanding preliminary studies of scattering-induced quantum diffusion in GaN-based nanomaterials. As for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis will show the failure of simplified dephasing models in describing phonon-induced scattering nonlocality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Wigner-function formalism applied to semiconductor quantum devices: Failure of the conventional boundary-condition scheme

The Wigner-function formalism is a well known approach to model charge transport in semiconductor nanodevices. Primary goal of the present article is to point out and explain intrinsic limitations of the conventional quantum-device modeling based on such Wigner-function paradigm, providing a definite answer to open questions related to the application of the conventional spatial boundary-condition scheme to the Wigner transport equation. Our analysis shows that (i) in the absence of energy dissipation (coherent limit) the solution of the Wigner equation equipped with given boundary conditions is not unique, and (ii) when decoherence/dissipation phenomena are taken into account via a relaxation-time approximation the solution, although unique, is not necessarily a physical Wigner function.

0 citations0 reviewsNo code linkedOpen access