Source author record

Robert Zierold

Robert Zierold appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2015arXiv

Electrochemical synthesis of highly ordered nanowires with a rectangular cross-section using an in-plane nanochannel array

Rapid and reproducible assembly of aligned nanostructures on a wafer-scale is a crucial, yet one of the most challenging tasks in the incorporation of nanowires into integrated circuits. We present the synthesis of a periodic nanochannel template designed for electrochemical growth of perfectly aligned, rectangular nanowires over large areas. The nanowires can be electrically contacted and characterized in situ using a pre-patterned multi-point measurement platform. During the measurement the wires remain within a thick oxide matrix providing protection against breaking and oxidation. We use laser interference lithography, reactive ion etching and atomic layer deposition to create cm-long parallel nanochannels with characteristic dimensions as small as 40 nm. In a showcase study pulsed electrodeposition of iron is carried out creating rectangular shaped iron nanowires within the nanochannels. By design of the device, the grown wires are in contact with an integrated electrode system on both ends directly after the deposition. No further processing steps are required for electrical characterization, minimizing the risk of damage and oxidation. The developed nanowire measurement device allows for multi-probe resistance measurements and can easily be adopted for transistor applications. The guided, in-plane growth of electrodeposited nanowire arrays which are tunable in size and density paves the way for the incorporation of nanowires into a large variety of multifunctional devices.

preprint2015arXiv

Thermoelectric performance of classical topological insulator nanowires

There is currently substantial effort being invested into creating efficient thermoelectric nanowires based on topological insulator chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good thermoelectric properties that these materials exhibit in bulk form will translate into similarly good or even better thermoelectric performance of the same materials in nanowire form. Here, we calculate thermoelectric performance of topological insulator nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the thermoelectric performance of topological insulator nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel causes a significant modification of the thermoelectric transport coefficients if the diameter is reduced into the sub-10 um range. Key aspects are that the surface and bulk states are optimized at different Fermi levels or have different polarity as well as the high surface to volume ratio of the nanowires. This limits the maximum thermoelectric performance of topological insulator nanowires and thus their application in efficient thermoelectric devices.

preprint2014arXiv

Resolving the Dirac Cone on the Surface of Bi2Te3 Topological Insulator Nanowires by Field-Effect Measurements

We validate the linear dispersion relation and resolve the Dirac cone on the surface of a single Bi2Te3 nanowire via a combination of field-effect and magnetoresistance measurements by which we unambiguously prove the topological insulator nature of the nanowire surface states. Moreover we show that the experimentally determined carrier concentration, mobility and cyclotron mass of the surface states are in excellent agreement with relativistic models. Our method provides a facile way to identify topological insulators that too small for angle-resolved photo emission spectroscopy.