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Robert Sinclair

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math.DG physics.app-ph

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preprint2022arXiv

Generalized von Mangoldt surfaces of revolution and asymmetric two-spheres of revolution with simple cut locus structure

It was known that if the Gaussian curvature function along each meridian on a surface of revolution $(R^2, dr^2+m(r)^2dθ^2)$ is decreasing, then the cut locus of each point of $θ^{-1}(0)$ is empty or a subarc of the opposite meridian $θ^{-1}(π).$ Such a surface is called a von Mangoldt's surface of revolution. A surface of revolution $(R^2, dr^2+m(r)^2dθ^2)$ is called a generalized von Mangoldt surface of revolution if the cut locus of each point of $θ^{-1}(0)$ is empty or a subarc of the opposite meridian $θ^{-1}(π).$ For example, the surface of revolution $(R^2, dr^2+m_0(r)^2dθ^2),$ where $m_0(x):=x/(1+x^2),$ has the same cut locus structure as above and the cut locus of each point in $r^{-1}( (0, \infty ) )$ is nonempty. Note that the Gaussian curvature function is not decreasing along a meridian for this surface. In this article, we give sufficient conditions for a surface of revolution $(R^2, dr^2+m(r)^2dθ^2)$ to be a generalized von Mangoldt surface of revolution. Moreover, we prove that for any surface of revolution with finite total curvature $c,$ there exists a generalized von Mangoldt surface of revolution with the same total curvature $c$ such that the Gaussian curvature function along a meridian is not monotone on $[a,\infty)$ for any $a>0.$

preprint2022arXiv

Nanodiamond grain boundaries and lattice expansion drive Silicon vacancy emission heterogeneity

Silicon-vacancy (SiV $^-$ ) centers in diamond are promising candidates as sources of single-photons in quantum networks due to their minimal phonon coupling and narrow optical linewidths. Correlating SiV $^-$ emission with the defect's atomic-scale structure is important for controlling and optimizing quantum emission, but remains an outstanding challenge. Here, we use cathodoluminescence imaging in a scanning transmission electron microscope (STEM) to elucidate the structural sources of non-ideality in the SiV $^-$ emission from nanodiamonds with sub-nanometer-scale resolution. We show that different crystalline domains of a nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness, while near-surface SiV $^-$ emitters remain bright. We correlate these changes with local lattice expansion using 4D STEM and diffraction, and show that associated blue shifts from the ZPL are due to defect density heterogeneity, while red shifts are due to lattice distortions.

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