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Researcher profile

Robert M. Reeve

Robert M. Reeve contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2021arXiv

Commensurability between element symmetry and the number of skyrmions governing skyrmion diffusion in confined geometries

Magnetic skyrmions are topological magnetic structures, which exhibit quasi-particle properties and can show enhanced stability against perturbation from thermal noise. Recently, thermal Brownian diffusion of these quasi-particles has been found in continuous films and applications in unconventional computing have received significant attention, which however require structured elements. Thus, as the next necessary step, we here study skyrmion diffusion in confined geometries and find it to be qualitatively different: The diffusion is governed by the interplay between the total number of skyrmions and the structure geometry. In particular, we ascertain the effect of circular and triangular geometrical confinement and find that for triangular geometries the behavior is drastically different for the cases when the number of skyrmions in the element is either commensurate or incommensurate with a symmetric filling of the element. This influence of commensurability is corroborated by simulations of a quasi-particle model.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantification of competing magnetic states and switching pathways in curved nanowires by direct dynamic imaging

For viable applications, spintronic devices based e.g. on domain wall motion need to be highly reliable with stable magnetization states and highly reproducible switching pathways transforming one state to another. The existence of multiple stable states and switching pathways in a system is a definitive barrier for device operation, yet rare and stochastic events are difficult to detect and understand. We demonstrate an approach to quantify competing magnetic states and stochastic switching pathways based on time-resolved scanning electron microscopy with polarization analysis, applied to the technologically relevant control of vortex domain wall chirality via field and curvature in curved wires. While being a pump-probe technique, our analysis scheme nonetheless allows for the disentanglement of different occurring dynamic pathways and we can even identify the rare events leading to changes from one magnetization switching pathway to another pathway via temperature- and geometry-dependent measurements. The experimental imaging is supported by micromagnetic simulations to reveal the mechanisms responsible for the change of the pathway. Together the results allow us to explain the origin and details of the domain wall chirality control and to quantify the frequency and the associated energy barriers of thermally activated changes of the states and switching pathways.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin Currents injected electrically and thermally from highly spin polarized Co$_2$MnSi

We demonstrate the injection and detection of electrically and thermally generated spin currents probed in Co$_2$MnSi/Cu lateral spin valves. Devices with different electrode separations are patterned to measure the non-local signal as a function of the electrode spacing and we determine a relatively high effective spin polarization $α$ of Co$_2$MnSi to be 0.63 and the spin diffusion length of Cu to be 500 nm at room temperature. The electrically generated non-local signal is measured as a function of temperature and a maximum signal is observed for a temperature of 80 K. The thermally generated non-local signal is measured as a function of current density and temperature in a second harmonic measurement detection scheme. We find different temperature dependences for the electrically and thermally generated non-local signals, which allows us to conclude that the temperature dependence of the signals is not just dominated by the transport in the Cu wire, but that there is a crucial contribution from the different generation mechanisms, which has been largely disregarded to date.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetic Domain Structure of La0.7Sr0.3MnO3 thin-films probed at variable temperature with Scanning Electron Microscopy with Polarization Analysis

The domain configuration of 50 nm thick La0.7SrMnO3 films has been directly investigated using scanning electron microscopy with polarization analysis (SEMPA), with magnetic contrast obtained without the requirement for prior surface preparation. The large scale domain structure reflects a primarily four-fold anisotropy, with a small uniaxial component, consistent with magneto-optic Kerr effect measurements. We also determine the domain transition profile and find it to be in agreement with previous estimates of the domain wall width in this material. The temperature dependence of the image contrast is investigated and compared to superconducting-quantum interference device magnetometry data. A faster decrease in the SEMPA contrast is revealed, which can be explained by the technique's extreme surface sensitivity, allowing us to selectively probe the surface spin polarization which due to the double exchange mechanism exhibits a distinctly different temperature dependence than the bulk magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts

We determine magnetoresistance effects in stable and clean permalloy nanocontacts of variable cross-section, fabricated by UHV deposition and in-situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect.

0 citations0 reviewsNo code linkedOpen access