Researcher profile

Robert E. Rudd

Robert E. Rudd contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Development of slurry targets for high repetition-rate XFEL experiments

Combining an x-ray free electron laser (XFEL) with high power laser drivers enables the study of phase transitions, equation-of-state, grain growth, strength, and transformation pathways as a function of pressure to 100s GPa along different thermodynamic compression paths. Future high-repetition rate laser operation will enable data to be accumulated at >1 Hz which poses a number of experimental challenges including the need to rapidly replenish the target. Here, we present a combined shock-compression and X-ray diffraction study on vol% epoxy(50)-crystalline grains(50) (slurry) targets, which can be fashioned into extruded ribbons for high repetition-rate operation. For shock-loaded NaCl-slurry samples, we observe pressure, density and temperature states within the embedded NaCl grains consistent with observations for shock-compressed single-crystal NaCl.

preprint2021arXiv

Nucleation of Grain Boundary Phases

We derive a theory that describes homogeneous nucleation of grain boundary (GB) phases. Our analysis takes account of the energy resulting from the GB phase junction, the line defect separating two different GB structures, which is necessarily a dislocation as well as an elastic line force due to the jump in GB stresses. The theory provides analytic forms for the elastic interactions and the core energy of the GB phase junction that, along with the change in GB energy, determine the nucleation barrier. We apply the resulting nucleation model to simulations of GB phase transformations in tungsten. Our theory explains why under certain conditions GBs cannot spontaneously change their structure even to a lower energy state.

preprint2009arXiv

Void Growth in BCC Metals Simulated with Molecular Dynamics using the Finnis-Sinclair Potential

The process of fracture in ductile metals involves the nucleation, growth, and linking of voids. This process takes place both at the low rates involved in typical engineering applications and at the high rates associated with dynamic fracture processes such as spallation. Here we study the growth of a void in a single crystal at high rates using molecular dynamics (MD) based on Finnis-Sinclair interatomic potentials for the body-centred cubic (bcc) metals V, Nb, Mo, Ta, and W. The use of the Finnis-Sinclair potential enables the study of plasticity associated with void growth at the atomic level at room temperature and strain rates from 10^9/s down to 10^6/s and systems as large as 128 million atoms. The atomistic systems are observed to undergo a transition from twinning at the higher end of this range to dislocation flow at the lower end. We analyze the simulations for the specific mechanisms of plasticity associated with void growth as dislocation loops are punched out to accommodate the growing void. We also analyse the process of nucleation and growth of voids in simulations of nanocrystalline Ta expanding at different strain rates. We comment on differences in the plasticity associated with void growth in the bcc metals compared to earlier studies in face-centred cubic (fcc) metals.

preprint2006arXiv

First-principles study of the Young&#39;s modulus of Si <001> nanowires

We report the results of first-principles density functional theory calculations of the Young&#39;s modulus and other mechanical properties of hydrogen-passivated Si <001> nanowires. The nanowires are taken to have predominantly {100} surfaces, with small {110} facets. The Young&#39;s modulus, the equilibrium length and the residual stress of a series of prismatic wires are found to have a size dependence that scales like the surface area to volume ratio for all but the smallest wires. We analyze the physical origin of the size dependence, and compare the results to two existing models.

preprint1998arXiv

Coupling of Length Scales and Atomistic Simulation of MEMS Resonators

We present simulations of the dynamic and temperature dependent behavior of Micro-Electro-Mechanical Systems (MEMS) by utilizing recently developed parallel codes which enable a coupling of length scales. The novel techniques used in this simulation accurately model the behavior of the mechanical components of MEMS down to the atomic scale. We study the vibrational behavior of one class of MEMS devices: micron-scale resonators made of silicon and quartz. The algorithmic and computational avenue applied here represents a significant departure from the usual finite element approach based on continuum elastic theory. The approach is to use an atomistic simulation in regions of significantly anharmonic forces and large surface area to volume ratios or where internal friction due to defects is anticipated. Peripheral regions of MEMS which are well-described by continuum elastic theory are simulated using finite elements for efficiency. Thus, in central regions of the device, the motion of millions of individual atoms is simulated, while the relatively large peripheral regions are modeled with finite elements. The two techniques run concurrently and mesh seamlessly, passing information back and forth. This coupling of length scales gives a natural domain decomposition, so that the code runs on multiprocessor workstations and supercomputers. We present novel simulations of the vibrational behavior of micron-scale silicon and quartz oscillators. Our results are contrasted with the predictions of continuum elastic theory as a function of size, and the failure of the continuum techniques is clear in the limit of small sizes. We also extract the Q value for the resonators and study the corresponding dissipative processes.