Researcher profile

Robert Colby

Robert Colby contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Understanding Creep Suppression Mechanism in Polymer Nanocomposites through Machine Learning

While recent efforts have shown how local structure plays an essential role in the dynamic heterogeneity of homogeneous glass-forming materials, systems containing interfaces such as thin films or composite materials remain poorly understood. It is known that interfaces perturb the molecular packing nearby, however, numerous studies show the dynamics are modified over a much larger range. Here, we examine the dynamics in polymer nanocomposites (PNCs) using a combination of simulations and experiments and quantitatively separate the role of polymer packing from other effects on the dynamics, as a function of distance from the nanoparticle surfaces. After showing good qualitative agreement between the simulations and experiments in glassy structure and creep compliance, we use a recently developed machine learning technique to decompose polymer dynamics in our simulated PNCs into structure-dependent and structure-independent processes. With this decomposition, the free energy barrier for polymer rearrangement can be described as a combination of packing-dependent and packing-independent barriers. We find both barriers are higher near nanoparticles and decrease with applied stress, quantitatively demonstrating that the slow interfacial dynamics is not solely due to polymer packing differences, but also the change of structure-dynamics relationships. Finally, we present how this decomposition can be used to accurately predict strain-time creep curves for PNCs from their static configuration, providing additional insights into the effects of polymer-nanoparticle interfaces on creep suppression in PNCs.

preprint2011arXiv

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

preprint2011arXiv

First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.

preprint2010arXiv

Large-scale Graphitic Thin Films Synthesized on Ni and Transferred to Insulators: Structural and Electronic Properties

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm^2/Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 $μ$m from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.