Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing Ballistic Electron Emission Microscopy
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using BEEM over a period of 21 days to observe changes in the interface electrostatics. Initially the average spectrum is fit to a Schottky barrier height of 0.71 eV and the map is uniform with 98% of the spectra able to be fit. After 21 days, the average spectrum is fit to a Schottky barrier height of 0.62 eV and the spatial map changes dramatically with only 27% of the spectra able to be fit. Transmission electron microscopy shows the formation of an ultra-thin tungsten silicide at the interface which increases in thickness over the 21 days. This increase is attributed to an increase in electron scattering and the changes are observed in the BEEM measurements. Interestingly, little to no change is observed in the I-V measurements throughout the 21 day period.