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Researcher profile

René Hübner

René Hübner contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-ph

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Published work

5 published item(s)

preprint2021arXiv

Insight into the structure-property relation of UO2 nanoparticles

Highly crystalline UO2 nanoparticles (NPs) with sizes of 2-3 nm were produced by fast chemical deposition of uranium(IV) under reducing conditions at pH 8-11. The particles were then characterized by microscopic and spectroscopic techniques including high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), high-energy resolution fluorescence detection (HERFD) X-ray absorption spectroscopy at the U M4 edge and extended X-ray absorption fine structure (EXAFS) spectroscopy at the U L3 edge. The results of this investigation show that despite U(IV) being the dominant oxidation state of the freshly prepared UO2 NPs, they oxidize to U4O9 with time and under the X-ray beam, indicating the high reactivity of U(IV) under these conditions. Moreover, it was found that the oxidation process of NPs is accompanied by their growth in size to 6 nm. We highlight here the major differences and similarities of the UO2 NPs properties with PuO2, ThO2 and CeO2 NPs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Local and nonlocal spin Seebeck effect in lateral Pt-$\mathrm{Cr_2O_3}$-Pt devices at low temperatures

We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic $α$-$\mathrm{Cr_2O_3}$ and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector-detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our $α$-$\mathrm{Cr_2O_3}$ films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicates that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are complementary or alternative to modern CMOS architectures. Nanometer-thin yttrium iron garnet (YIG) films have been the gold standard for insulator-based spintronics to date, but a potential process technology that can deliver perfect, homogeneous large-diameter films is still lacking. We report that liquid phase epitaxy (LPE) enables the deposition of nanometer-thin YIG films with low ferromagnetic resonance losses and consistently high magnetic quality down to a thickness of 20 nm. The obtained epitaxial films are characterized by an ideal stoichiometry and perfect film lattices, which show neither significant compositional strain nor geometric mosaicity, but sharp interfaces. Their magneto-static and dynamic behavior is similar to that of single crystalline bulk YIG. We found, that the Gilbert damping coefficient alpha is independent of the film thickness and close to 1 x 10-4, and that together with an inhomogeneous peak-to-peak linewidth broadening of delta H0|| = 0.4 G, these values are among the lowest ever reported for YIG films with a thickness smaller than 40 nm. These results suggest, that nanometer-thin LPE films can be used to fabricate nano- and micro-scaled circuits with the required quality for magnonic devices. The LPE technique is easily scalable to YIG sample diameters of several inches.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in the low fluence range of neutrons or after annealing treatments. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Combining both experimental and first-principles calculation results, the defect-induced ferromagnetism can be understood as a local effect which cannot be scaled up with the volume. Therefore, our investigation answers the long-standing question why the defect-induced ferromagnetic signal is weak.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Si nano-VINe: Electrical Percolation in Quantum-Confined nc-Si:SiO2 Systems

Nanostructures, especially of silicon, are of paramount importance for new generation solar cell applications. The key material requirements for solar cells are good electrical conductivity, confinement of excitons, and a tunable band-gap that allows for tandem arrangements to absorb a maximally large portion of the solar spectrum. However, to date, existing Si-based nanostructures have addressed these requirements individually. The difficulty is that these requirements are entangled in complex ways, so an effort to improve one can lead to a major trade-offs in the others. In this study, we report on a novel silicon nanostructure, where the key advance is that we have managed to satisfy all the abovementioned requirements simultaneously: We demonstrate that the excitons are confined, the bandgap is tunable, and the electrons can freely travel along the nc-Si network.

0 citations0 reviewsNo code linkedOpen access