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Researcher profile

Renaud Leturcq

Renaud Leturcq contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.stat-mechphysics.app-ph

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3 published item(s)

preprint2022arXiv

Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by electric contact deposition and annealing. Photoluminescence measurements reveal high optical quality and improved crystallinity of annealed ZnO on silicon. Photocurrent measurements as a function of illumination wavelength and bias voltage show small negative values in the UV-visible spectral range at zero and positive bias voltage and high positive values in the NIR spectral range. For these measurements, we consider the electric contact to ZnO as the anode and the electric contact to silicon as the cathode. At negative bias voltage, the device shows broadband operation with high photocurrent values across the UV-vis-NIR.

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preprint2019arXiv

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries.

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preprint2010arXiv

Non-equilibrium Fluctuation Relations in a Quantum Coherent Conductor

We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyqusit relation. When the conductor is voltage-biased so that the non-linear regime is entered, the fluctuation theorem has predicted similar non-equilibrium fluctuation relations, which hold true even when the Onsager-Casmir relations are broken in magnetic fields. Our experiments qualitatively validate the predictions as the first evidence of this theorem in the non-equilibrium quantum regime. In the appendix, we give simple deduction of the higher order correlations between the current and the current noise based on the fluctuation theorem.

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