Source author record

Renat T. Sibatov

Renat T. Sibatov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

8works
7topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2020arXiv

Graphenylene nanoribbons: electronic, optical and thermoelectric properties from first-principles calculations

Recently synthesized two-dimensional graphene-like material referred to as graphenylene is a semiconductor with a narrow direct bandgap that holds great promise for nanoelectronic applications. The significant bandgap increase can be provided by the strain applied to graphenylene crystal lattice or by using nanoribbons instead of extended layers. In this paper, we present the systematic study of the electronic, optical and thermoelectric properties of graphenylene nanoribbons using calculations based on the density functional theory. Estimating the binding energies, we substantiate the stability of nanoribbons with zigzag and armchair edges passivated by hydrogen atoms. Electronic spectra indicate that all considered structures could be classified as direct bandgap semiconductors. The absorption coefficient, optical conductivity, and complex refractive index are calculated by means of the first-principles methods and the Kubo-Greenwood formula. It has been shown that graphenylene ribbons effectively absorb visible-range electromagnetic waves. Due to this absorption, the conductivity is noticeably increased in this range. The transport coefficients and thermoelectric figure of merit are calculated by the nonequilibrium Green functions method. Summarizing the results, we discuss the possible use of graphenylene films and nanoribbons in nanoelectronic devices.

preprint2013arXiv

Transient processes in disordered semiconductor structures under dispersive transport conditions: Fractional calculus approach

We continue to develop a new approach to description of charge kinetics in disordered semiconductors. It is based on fractional diffusion equations. This article is devoted to transient processes in structures under dispersive transport conditions. We demonstrate that this approach allows us (i) to take into account energetic and topological types of disorder in common, (ii) to consider transport in samples with spatial distributions of localized states, and (iii) to describe transport in non-homogeneous materials with distributed dispersion parameter. Using fractional approach provides some specifications in interpretation of time-of-flight experiments in disordered semiconductors.

preprint2011arXiv

Cosmic ray propagators in the fractional differential model of bounded anomalous diffusion

Fractional differential approach to cosmic ray physics problems is discussed. A short review in this field is given, some results are represented, analyzed and criticized. A new model called the bounded anomalous diffusion model is offered. Its equation includes the fractional material derivative which allows to take into account the finite speed of cosmic rays particles.

preprint2010arXiv

Fractional Boltzmann equation for resonance radiation transport in plasma

The fractional Boltzmann equation for resonance radiation transport in plasma is proposed. We start from the standard Boltzmann equation, averaging over frequencies leads to appearance of fractional derivative. This fact is in accordance with the conception of latent variables leading to hereditary and non-local dynamics (in particular, fractional dynamics). The presence of the fractional material derivative in the equation is concordant with heavy tailed distribution of photon path lengths and with spatiotemporal coupling peculiar to the process. We discuss some methods of solution of the obtained equation and demonstrate numerical results in some simple cases.

preprint2010arXiv

Fractional processes: from Poisson to branching one

Fractional generalizations of the Poisson process and branching Furry process are considered. The link between characteristics of the processes, fractional differential equations and Levy stable densities are discussed and used for construction of the Monte Carlo algorithm for simulation of random waiting times in fractional processes. Numerical calculations are performed and limit distributions of the normalized variable Z=N/<N> are found for both processes.

preprint2010arXiv

Fractional relaxation and wave equations for dielectrics characterized by the Havriliak-Negami response function

A fractional relaxation equation in dielectrics with response function of the Havriliak-Negami type is derived. An explicit expression for the fractional operator in this equation is obtained and Monte Carlo algorithm for calculation of action of this operator is constructed. Relaxation functions calculated numerically according to this scheme coincide with analytical functions obtained earlier by other authors. The algorithm represents a numerical way of calculation in relaxation problems with arbitrary initial and boundary conditions. A fractional equation for electromagnetic waves in such dielectric media is obtained. Numerical results are in a good agreement with experimental data.

preprint2010arXiv

Statistical model of charge transport in colloidal quantum dot array

A new statistical model of charge transport in colloidal quantum dot arrays is proposed. It takes into account Coulomb blockade forbidding multiple occupancy of nanocrystals and influence of energetic disorder of interdot space. The model explains power law current transients and the presence of memory effect. The fractional differential analogue of the Ohm law is found phenomenologically for nanocrystal arrays. The model combines ideas that were considered as conflicting by other authors: the Scher-Montroll idea about power law distribution of waiting times in localized states for disordered semiconductors is applied with taking into account Coulomb blockade, Novikov's condition about asymptotical power law distribution of time intervals between successful current pulses in conduction channels is fulfilled, carrier injection blocking predicted by Ginger and Greenham takes place.

preprint2010arXiv

Truncated Levy statistics for transport in disordered semiconductors

Probabilistic interpretation of transition from the dispersive transport regime to the quasi-Gaussian one in disordered semiconductors is given in terms of truncated Levy distributions. Corresponding transport equations with fractional order derivatives are derived. We discuss physical causes leading to truncated waiting time distributions in the process and describe influence of truncation on carrier packet form, transient current curves and frequency dependence of conductivity. Theoretical results are in a good agreement with experimental facts.