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Reese E. Jones

Reese E. Jones contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Learning hyperelastic anisotropy from data via a tensor basis neural network

Anisotropy in the mechanical response of materials with microstructure is common and yet is difficult to assess and model. To construct accurate response models given only stress-strain data, we employ classical representation theory, novel neural network layers, and L1 regularization. The proposed tensor-basis neural network can discover both the type and orientation of the anisotropy and provide an accurate model of the stress response. The method is demonstrated with data from hyperelastic materials with off-axis transverse isotropy and orthotropy, as well as materials with less well-defined symmetries induced by fibers or spherical inclusions. Both plain feed-forward neural networks and input-convex neural network formulations are developed and tested. Using the latter, a polyconvex potential can be established, which, by satisfying the growth condition can guarantee the existence of boundary value problem solutions.

preprint2012arXiv

Effects of nano-void density, size, and spatial population on thermal conductivity: a case study of GaN crystal

The thermal conductivity of a crystal is sensitive to the presence of surfaces and nanoscale defects. While this opens tremendous opportunities to tailor thermal conductivity, a true "phonon engineering" of nanocrystals for a specific electronic or thermoelectric application can only be achieved when the dependence of thermal conductivity on the defect density, size, and spatial population is understood and quantified. Unfortunately, experimental studies of effects of nanoscale defects are quite challenging. While molecular dynamics simulations are effective in calculating thermal conductivity, the defect density range that can be explored with feasible computing resources is unrealistically high. As a result, previous work has not generated a fully detailed understanding of the dependence of thermal conductivity on nanoscale defects. Using GaN as an example, we have combined physically-motivated analytical model and highly-converged large scale molecular dynamics simulations to study effects of defects on thermal conductivity. An analytical expression for thermal conductivity as a function of void density, size, and population has been derived and corroborated with the model, simulations, and experiments.