Researcher profile

Raul Cardoso-Gil

Raul Cardoso-Gil contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Phonon-drag effect in FeGa3

The thermoelectric properties of single- and polycrystalline FeGa3 are systematically investigated over a wide temperature range. At low temperatures, below 20 K, previously not known pronounced peaks in the thermal conductivity (400-800 W K^-1m-1) with corresponding maxima in the thermopower (in the order of -16000 microV/K) were found in single crystalline samples. Measurements in single crystals along [100] and [001] directions indicate only a slight anisotropy in both the electrical and thermal transport. From susceptibility and heat capacity measurements, a structural or magnetic phase transition was excluded. Using density functional theory-based calculations, we have revisited the electronic structure of FeGa3 and compared the magnetic (including correlations) and non-magnetic electronic density of states. Thermopower at fixed carrier concentrations are calculated using semi-classical Boltzmann transport theory, and the calculated results match fairly with our experimental data and exclude the possibility of strong electronic correlations as an explanation for the low temperature enhancement. Eventually, after a careful review, we assign the peaks in the thermopower as a manifestation of the phonon-drag effect, which is supported by thermopower measurements in a magnetic field.

preprint2012arXiv

Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)

Recently, we reported [M. Wagner et al., J. Mater. Res. 26, 1886 (2011)] transport measurements on the semiconducting intermetallic system RuIn3 and its substitution derivatives RuIn_{3-x}A_{x} (A = Sn, Zn). Higher values of the thermoelectric figure of merit (zT = 0.45) compared to the parent compound were achieved by chemical substitution. Here, using density functional theory based calculations, we report on the microscopic picture behind the measured phenomenon. We show in detail that the electronic structure of the substitution variants of the intermetallic system RuIn_{3-x}A_{x} (A = Sn, Zn) changes in a rigid-band like fashion. This behavior makes possible the fine tuning of the substitution concentration to take advantage of the sharp peak-like features in the density of states of the semiconducting parent compound. Trends in the transport properties calculated using the semi-classical Boltzmann transport equations within the constant scattering time approximation are in good agreement with the former experimental results for RuIn_{3-x}Sn_{x}. Based on the calculated thermopower for the p-doped systems, we reinvestigated the Zn-substituted derivative and obtained ZnO-free RuIn_{3-x}Zn_{x}. The new experimental results are consistent with the calculated trend in thermopower and yield large zT value of 0.8.