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Rasmus B. Christensen

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cond-mat.mes-hall

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preprint2015arXiv

Current-induced forces and hot-spots in biased nano-junctions

We investigate theoretically the interplay of current-induced forces (CIF), Joule heating, and heat transport inside a current-carrying nano-conductor. We find that the CIF, due to the electron-phonon coherence, can control the spatial heat dissipation in the conductor. This yields a significant asymmetric concentration of excess heating (hot-spot) even for a symmetric conductor. When coupled to the electrode phonons, CIF drive different phonon heat flux into the two electrodes. First-principles calculations on realistic biased nano-junctions illustrate the importance of the effect.

preprint2015arXiv

On the identification of pristine and defected graphene nanoribbons by phonon signatures in the electron transport characteristics

Inspired by recent experiments where electron transport was measured across graphene nanoribbons (GNR) suspended between a metal surface and the tip of a scanning tunneling microscope [Koch \textit{et al}., Nat. Nanotechnol. {\bf 7}, 713 (2012)], we present detailed first-principles simulations of inelastic electron tunneling spectroscopy (IETS) of long pristine and defected armchair and zigzag nanoribbons under a range of charge carrier conditions. For the armchair ribbons we find two robust IETS signals around 169 and 196 mV corresponding to the D- and G-modes of Raman spectroscopy as well as additional fingerprints due to various types of defects in the edge passivation. For the zigzag ribbons we show that the spin state strongly influences the spectrum and thus propose IETS as an indirect proof of spin polarization.

preprint2014arXiv

Efficient calculation of inelastic vibration signals in electron transport: Beyond the wide-band approximation

We extend the simple and efficient lowest order expansion (LOE) for inelastic electron tunneling spectroscopy (IETS) to include variations in the electronic structure on the scale of the vibration energies. This enables first-principles calculations of IETS lineshapes for molecular junctions close to resonances and band edges. We demonstrate how this is relevant for the interpretation of experimental IETS using both a simple model and atomistic first-principles simulations.