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Rami Hajj Hussein

Rami Hajj Hussein appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2014arXiv

Near-forward Raman study of a phonon-polariton reinforcement regime in the Zn(Se,S) alloy

We investigate by near-forward Raman scattering a presumed reinforcement of the (A-C,B-C)-mixed phonon-polariton of a A1-xBxC zincblende alloy when entering its longitudinal optical (LO-)regime near the Brillouin zone centre Γ, as predicted within the formalism of the linear dielectric response. A choice system to address such issue is ZnSe0.68S0.32 due to the moderate dispersion of its refractive index in the visible range, a sine qua non condition to bring the phonon-polariton insight near Γ. The LO-regime is actually accessed by using the 633.0 nm laser excitation, testified by the strong emergence of the (Zn-Se,Zn-S)-mixed phonon-polariton at ultimately small scattering angles.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Near-forward Raman scattering by bulk and surface phonon-polaritons in the model percolation-type ZnBeSe alloy

We study the bulk and surface phonon-polaritons of the Zn0.67Be0.33Se zincblende alloy by near-forward Raman scattering. The short (Be-Se) bond exhibits a distinct percolation doublet in the conventional backscattering Raman spectra, corresponding to a three-mode behavior in total [1(Zn-Se),2(Be-Se)] for Zn0.67Be0.33Se. This offers an opportunity to achieve a refined understanding of the phonon-polariton modes of a zincblende alloy beyond the current two-mode approximation, corresponding to a [1(Zn-Se),1(Be-Se)] description in the present case. The discussion is supported by contour modeling of the Raman signals of the multi-mode bulk and surface phonon-polaritons within the formalism of the linear dielectric response.

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preprint2013arXiv

SiGe Raman spectra vs. local clustering/anticlustering : Percolation scheme and ab initio calculations

We formalize within the percolation scheme, that operates along the linear chain approximation, namely at one dimension (1D), an intrinsic ability behind Raman scattering to achieve a quantitative insight into local clustering or anticlustering in an alloy, using SiGe as a case study. For doing so, we derive general expressions of the individual fractions of the six SiGe percolation-type oscillators [1(Ge-Ge), 3(Si-Ge), 2(Si-Si)], which monitor directly the Raman intensities, via a relevant order parameter k. This is introduced by adapting to the 1D oscillators of the SiGe diamond version of the 1D percolation scheme, namely along a fully consistent 1D treatment, the approach originally used by Verleur and Barker for the three-dimensional (3D) oscillators of their 1D cluster scheme applying to zincblende alloys [H.W. Verleur and A.S. Barker, Phys. Rev. 149, 715 (1966)], a somehow problematic one in fact, due to its 3D vs. 1D ambivalence. Predictive k-dependent intensity interplays between the SiGe (50 at.%Si) Raman lines are confronted with existing experimental data and with ab initio Raman spectra obtained by using large (32 atom) disordered supercells matching the required k values, with special attention to the Si-Ge triplet and to the Si-Si doublet, respectively.

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