Researcher profile

Rami Dana

Rami Dana contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor

Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low temperature defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and non-local exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with the unique ingredient of direct optical access.

preprint2022arXiv

Suspended graphene membranes to control Au nucleation and growth

Control of nucleation sites is an important goal in materials growth: nuclei in regular arrays may show emergent photonic or electronic behavior, and once the nuclei coalesce into thin films, the nucleation density influences parameters such as surface roughness, stress, and grain boundary structure. Tailoring substrate properties to control nucleation is therefore a powerful tool for designing functional thin films and nanomaterials. Here, we examine nucleation control for metals deposited on two-dimensional (2D) materials in a situation where substrate effects are absent and heterogeneous nucleation sites are minimized. Through quantification of faceted, epitaxial Au island nucleation on graphene, we show that ultra-low nucleation densities with nuclei several micrometers apart can be achieved on suspended graphene under conditions where we measure the nucleation density to be 2-3 orders of magnitude higher on the adjacent supported substrate. We estimate diffusion distances using nucleation theory and find a strong sensitivity of nucleation and diffusion to suspended graphene thickness. We suggest that nucleation site density control via substrate tuning may act as a platform for applications where non-lithographic patterning of metals on graphene is beneficial.