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Ramesh G. Mani

Ramesh G. Mani appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

2 published item(s)

preprint2016arXiv

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularlypolarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.

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preprint2016arXiv

Method for determining the residual electron- and hole- densities about the neutrality point over the gate-controlled n $\leftrightarrow$ p transition in graphene

The Hall effect, and the diagonal resistance, which indicates a residual resistivity $ρ_{xx} \approx h/4e^{2}$, are experimentally examined over the p$\leftrightarrow$n transition about the nominal neutrality point in chemical vapor deposition (CVD) grown graphene. A distribution of neutrality potentials is invoked in conjunction with multi-carrier conduction to model the experimental observations. From the modeling, we extract the effective residual electron- and hole- densities around the nominal neutrality point. The results indicate mixed transport due to co-existing electrons and holes in large area zero-band gap CVD graphene devices, which indicates domain confined ambipolar currents broadly over the gate-induced n $\leftrightarrow$ p transition.

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