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Researcher profile

Ramesh C. Budhani

Ramesh C. Budhani contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2022arXiv

Light and microwave driven spin pumping across FeGaB-BiSb interface

3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe_{78}Ga_{13}B_{9} (FeGaB) and 3-D TI Bi_{85}Sb_{15} (BiSb) activated by two complementary techniques: spin pumping and ultrafast spin-current injection. DC magnetization measurements establish the soft magnetic character of FeGaB films, which remains unaltered in the heterostructures of FeGaB-BiSb. Broadband ferromagnetic resonance (FMR) studies reveal enhanced damping of precessing magnetization and large value of spin mixing conductance (5.03 x 10^{19} m^{-2}) as the spin angular momentum leaks into the TI layer. Magnetic field controlled bipolar dc voltage generated across the TI layer by inverse spin Hall effect is analyzed to extract the values of spin Hall angle and spin diffusion length of BiSb. The spin pumping parameters derived from the measurements of the femtosecond light-pulse-induced terahertz emission are consistent with the result of FMR. Kubo-Bastin formula and tight-binding model calculations shed light on the thickness-dependent spin-Hall conductivity of the TI films, with predictions that are in remarkable agreement with the experimental data. Our results suggest that room temperature deposited amorphous and polycrystalline heterostructures provide a promising platform for creating novel spin orbit torque devices.

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preprint2022arXiv

Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers

The enhancement of interfacial Dzyaloshinskii-Moriya Interaction (DMI) in magnetic multilayers results in the stabilization of topological spin textures like chiral domain walls and skyrmions. Here we report on the evaluation of interface-driven magnetic interactions in a uniquely designed multilayer where each magnetic layer of two AFM coupled sublattices of 3d and 4f moments is sandwiched between the layers of β-tungsten and holmium whose spin Hall angles are large but opposite in sign. The atomic and magnetic periodicity of these multilayers is established by polarized neutron reflectivity measurements and the presence of a labyrinth domain spin texture of zero remanence with x-ray photoelectron microscopy. Measurements of the Hall resistivity (ρ_{xy}(T, H)) together with static magnetization (M(T,H)) over a broad range of temperature (T) and magnetic field (H) indicate impending compensation between 3d and 4f sublattices at T>350 K. These multilayers are characterized by a small (0.04 %) but positive magnetoresistance indicative of interface enhance scattering and a large (40 nΩ.m) and negative anomalous ρ_{xy}(T,H) which results from a parallel alignment of 4f moments with the external magnetic field. No distinct scaling is seen between ρ_{xy}(T,H), ρ_{xx}(T, H) and M(T,H) at temperatures above 200K where the magnetization develops out-of-plane anisotropy. The field scans of ρ_{xy} at T>200K show a distinct cusp in the vicinity of magnetic saturation. These Hall data have been analyzed in the framework of a model where a distinct topological contribution to ρ_{xy} rides over the anomalous Hall resistivities of the 3d and 4f magnetic sublattices. It is suggested that this apparent topological effect results from an interfacial DMI and dominates ρ_{xy}(T,H) in the temperature regime where the 3d and 4f lattices are nearly compensated.

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preprint2022arXiv

Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films

Measurements of frequency dependent ferromagnetic resonance (FMR) and spin pumping driven dc voltage (V_{dc}) are reported for amorphous films of Fe_{78}Ga_{13}B_{9} (FeGaB) alloy to address the phenomenon of self-induced inverse spin Hall effect (ISHE) in plain films of metallic ferromagnets. The V_{dc} signal, which is antisymmetric on field reversal, comprises of symmetric and asymmetric Lorentzians centered around the resonance field. Dominant role of thin film size effects is seen in setting the magnitude of static magnetization, V_{dc} and dynamics of magnetization precession in thinner films (\leq 8 nm). The film thickness dependence of magnetization parameters indicates the presence of a magnetically disordered region at the film-substrate interface, which may promote preferential flow of spins generated by the precessing magnetization towards the substrate. However, the V_{dc} signal also draws contributions from rectification effects of a \approx 0.4 \% anisotropic magnetoresistance and a large (\approx 54 nΩ.m) anomalous Hall resistivity (AHR) of these films which ride over the effect of spin-orbit coupling driven spin-to-charge conversion near the film-substrate interface. We have addressed these data in the framework of the existing theories of electrodynamics of a ferromagnetic film subjected to radio-frequency field in a coplanar waveguide geometry. Our estimation of the self-induced ISHE for the sample with 54 nΩ.m AHR shows that it may contribute significantly (\approx 90\%) to the measured symmetric voltage. This study is expected to be very useful for fully understanding the spin pumping induced dc voltages in metallic ferromagnets with disordered interfaces and large anomalous Hall effect.

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