Source author record

Rakesh Kumar Yadav

Rakesh Kumar Yadav appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2020arXiv

Deep rotating convection generates the polar hexagon on Saturn

Numerous land and space-based observations have established that Saturn has a persistent hexagonal flow pattern near its north pole. While observations abound, the physics behind its formation is still uncertain. Although several phenomenological models have been able to reproduce this feature, a self-consistent model for how such a large-scale polygonal jet forms in the highly turbulent atmosphere of Saturn is lacking. Here we present a 3D fully-nonlinear anelastic simulation of deep thermal convection in the outer layers of gas giant planets which spontaneously generates giant polar cyclones, fierce alternating zonal flows, and a high latitude eastward jet with a polygonal pattern. The analysis of the simulation suggests that self-organized turbulence in the form of giant vortices pinches the eastward jet, forming polygonal shapes. We argue that a similar mechanism is responsible for exciting Saturn's hexagonal flow pattern.

preprint2011arXiv

Performance evaluation of FD-SOI Mosfets for different metal gate work function

Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI MOSFET. Sentaurus TCAD simulation tool is used to investigate the effect of work function of gates ont he performance FDSOI MOSFET. Specific channel length of the device that had been concentrated is 25nm. From simulation we observed that by changing the work function of the metal gates of FD-SOI MOSFET we can change the threshold voltage. Hence by using this technique we can set the appropriate threshold voltage of FD-SOI MOSFET at same voltage and we can decrease the leakage current, gate tunneling current and short channel effects and increase drive current.