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Researcher profile

Rajat Vishnoi

Rajat Vishnoi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

A Pseudo 2D-analytical Model of Dual Material Gate All-Around Nanowire Tunneling FET

In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor (TFET). The model incorporates the effect of drain voltage, gate metal work functions, thickness of oxide and silicon nanowire radius. The model does not assume a fully depleted channel. With the help of this model we have demonstrated the accumulation of charge at the interface of the two gates. The accuracy of the model is tested using the 3D device simulator Silvaco Atlas.

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preprint2014arXiv

Compact Analytical Model of Dual Material Gate Tunneling Field Effect Transistor using Interband Tunneling and Channel Transport

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model includes the effect of drain voltage, gate metal work function, oxide thickness and silicon film thickness, without assuming a fully depleted channel. The proposed model also includes the effect of charge accumulation at the interface of the two gates and the variation in the tunneling volume with the applied gate voltage. The accuracy of the model is tested using two-dimensional numerical simulations. In comparison to the conventional TFET, the proposed model predicts that a DMGTFET provides a higher ON-state current (ION), a better ON-state to OFF-state current (ION/IOFF) ratio and a better sub-threshold slope (SS).

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