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Researcher profile

Raj K. Sah

Raj K. Sah contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-conphysics.app-phphysics.chem-phphysics.comp-ph

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Published work

2 published item(s)

preprint2023arXiv

Ultra-thin Epitaxial MgB2 on SiC: Substrate Surface Polarity Dependent Properties

High quality, ultrathin, superconducting films are required for advanced devices such as hot-electron bolometers, superconducting nanowire single photon detectors, and quantum applications. Using Hybrid Physical-Chemical Vapor Deposition (HPCVD), we show that MgB2 films as thin as 4 nm can be fabricated on the carbon terminated 6H-SiC (0001) surface with a superconducting transition temperature above 33K and a rms roughness of 0.7 nm. Remarkably, the film quality is a function of the SiC surface termination, with the C-terminated surface preferred to the Si-terminated surface. To understand the MgB2 thin film/ SiC substrate interactions giving rise to this difference, we characterized the interfacial structures using Rutherford backscattering spectroscopy/channeling, electron energy loss spectroscopy, and x-ray photoemission spectroscopy. The MgB2/SiC interface structure is complex and different for the two terminations. Both terminations incorporate substantial unintentional oxide layers influencing MgB2 growth and morphology, but with different extent, intermixing and interface chemistry. In this paper, we report measurements of transport, resistivity, and critical superconducting temperature of MgB2/SiC that are different for the two terminations, and link interfacial structure variations to observed differences. The result shows that the C face of SiC is a preferred substrate for the deposition of ultrathin superconducting MgB2 films.

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preprint2022arXiv

Understanding density driven errors for reaction barrier heights

Delocalization errors, such as charge-transfer and some self-interaction errors, plague computationally-efficient and otherwise-accurate density functional approximations (DFAs). Evaluating a semi-local DFA non-self-consistently on the Hartree-Fock (HF) density is often recommended as a computationally cheap remedy for delocalization errors. For sophisticated meta-GGAs like SCAN, this approach can achieve remarkable accuracy. When this HF-DFT (or DFA@HF) significantly improves over the DFA, it is often presumed that the HF density is more accurate than the self-consistent DFA density. By applying the metrics of density-corrected density functional theory (DFT), we show that HF-DFT works for barrier heights by making a localizing charge transfer error or density over-correction, thereby producing a somewhat-reliable cancellation of density- and functional-driven errors for the energy. A quantitative analysis of the charge transfer errors in a few transition states confirms this trend. We do not have the exact functional and exact densities that are needed to evaluate the exact density- and functional-driven errors for the large BH76 database of barrier heights. Instead, we have identified and used three non-local proxy functionals (the SCAN 50% global hybrid, the range-separated hybrid LC-$ω$PBE, and SCAN-FLOSIC) and their self-consistent densities. These functionals yield reasonably accurate self-consistent barrier heights, and their self-consistent total energies are nearly piecewise linear in fractional electron number - two important points of similarity to the exact functional. We argue that density-driven errors of the energy in a self-consistent density functional calculation are second-order in the density error, and that large density-driven errors arise primarily from incorrect electron transfers over length scales larger than the diameter of an atom.

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