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Rafał Korlacki

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cond-mat.mtrl-sci

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preprint2022arXiv

Strain and composition dependencies of the near bandgap optical transitions in monoclinic (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$ alloys with coherent biaxial in-plane strain on (010) Ga $_2$ O $_3$

The bowing of the energy of the three lowest band-to-band transitions in $β$ -(Al $_{x}$ Ga $_{1-x}$ ) $_2$ O $_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach. The DFT calculations of the electronic band structure of both, $β$ -Ga $_2$ O $_3$ and $θ$ -Al $_2$ O $_3$ , allow extracting of the linear portion of the energy shift in the alloys, and provide a method for quantifying the role of coherent strain present in the $β$ -(Al $_{x}$ Ga $_{1-x}$ ) $_2$ O $_3$ thin films on (010) $β$ -Ga $_2$ O $_3$ substrates. The energies of band-to-band transitions were obtained using the spectroscopic ellipsometry eigenpolarization model approach [A. Mock et al., Phys. Rev. B 95, 165202 (2017)]. After subtracting the effects of strain which also induces additional bowing and after subtraction of the linear portion of the energy shift due to alloying, the bowing parameters associated with the three lowest band-to-band transitions in monoclinic $β$ -(Al $_{x}$ Ga $_{1-x}$ ) $_2$ O $_3$ are found.

preprint2021arXiv

Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3

We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an $α$ -Ga $_2$ O $_3$ thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on $m$ -plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with $M_0$ -type van Hove singularities for polarization perpendicular to the $c$ axis, $E_{0,\perp}=5.46(6)$ eV and $E_{0,\perp}=6.04(1)$ eV, and one direct band-to-band transition with $M_1$ -type van Hove singularity for polarization parallel with $E_{0,||}=5.44(2)$ eV. We further identify excitonic contributions with small binding energy of 7 meV associated with the lowest ordinary transition, and a hyperbolic exciton at the $M_1$ -type critical point with large binding energy of 178 meV.

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Rafał Korlacki

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2 publications

Strain and composition dependencies of the near bandgap optical transitions in monoclinic (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$ alloys with coherent biaxial in-plane strain on (010) Ga $_2$ O $_3$

Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3

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Rafał Korlacki

Research overview

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2 publications

Strain and composition dependencies of the near bandgap optical transitions in monoclinic (Alx_xx​Ga1−x_{1-x}1−x​)2_22​O3_33​ alloys with coherent biaxial in-plane strain on (010) Ga2_22​O3_33​

Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3

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Strain and composition dependencies of the near bandgap optical transitions in monoclinic (Al $_x$ Ga $_{1-x}$ ) $_2$ O $_3$ alloys with coherent biaxial in-plane strain on (010) Ga $_2$ O $_3$