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Rachael L. Myers-Ward

Rachael L. Myers-Ward appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.supr-con

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Published work

12 published item(s)

preprint2020arXiv

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type doping. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hybrid Metal-Graphene Plasmons for Tunable Terahertz Technology

Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves are confined to finite-sized graphene, plasmon resonances emerge that are characterized by alternating charge accumulation at the opposing edges of the graphene. The resonant frequency of such a structure depends on both the size and the surface charge density, and can be electrically tuned throughout the terahertz range by applying a gate voltage[3,4]. The promise of tunable graphene THz plasmonics has yet to be fulfilled, however, because most proposed optoelectronic devices including detectors, filters, and modulators[5-10] desire near total modulation of the absorption or transmission, and require electrical contacts to the graphene -- constraints that are difficult to meet using existing plasmonic structures. We report here a new class of plasmon resonance that occurs in a hybrid graphene-metal structure. The sub-wavelength metal contacts form a capacitive grid for accumulating charge, while the narrow interleaved graphene channels, to first order, serves as a tunable inductive medium, thereby forming a structure that is resonantly-matched to an incident terahertz wave. We experimentally demonstrate resonant absorption near the theoretical maximum in readily-available, large-area graphene, ideal for THz detectors and tunable absorbers. We further predict that the use of high mobility graphene will allow resonant THz transmission near 100%, realizing a tunable THz filter or modulator. The structure is strongly coupled to incident THz radiation, and solves a fundamental problem of how to incorporate a tunable plasmonic channel into a device with electrical contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Sensitive Room-Temperature Terahertz Detection via Photothermoelectric Effect in Graphene

Terahertz (THz) radiation has uses from security to medicine; however, sensitive room-temperature detection of THz is notoriously difficult. The hot-electron photothermoelectric effect in graphene is a promising detection mechanism: photoexcited carriers rapidly thermalize due to strong electron-electron interactions, but lose energy to the lattice more slowly. The electron temperature gradient drives electron diffusion, and asymmetry due to local gating or dissimilar contact metals produces a net current via the thermoelectric effect. Here we demonstrate a graphene thermoelectric THz photodetector with sensitivity exceeding 10 V/W (700 V/W) at room temperature and noise equivalent power less than 1100 pW/Hz^1/2 (20 pW/Hz^1/2), referenced to the incident (absorbed) power. This implies a performance which is competitive with the best room-temperature THz detectors for an optimally coupled device, while time-resolved measurements indicate that our graphene detector is eight to nine orders of magnitude faster than those. A simple model of the response, including contact asymmetries (resistance, work function and Fermi-energy pinning) reproduces the qualitative features of the data, and indicates that orders-of-magnitude sensitivity improvements are possible.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Epitaxial Graphene Growth on SiC Wafers

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Graphene formation on SiC substrates

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.

0 citations0 reviewsNo code linkedOpen access