Source author record

R. Z. Wang

R. Z. Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2013arXiv

Magnetic Exchange Coupling and Anisotropy of 3d Transition-Metal Nanowire on the Surface of Graphyne Sheet

Using density functional theory plus Hubbard-U (DFT+U) approach, we find that quasi one-dementation(1D) 3d transition metal(TM) zigzag nanowire can be constructed by TM adsorbed on the surface of graphyne sheet. The results show that the TM exchange coupling of the zigzag nanowire mediated by sp hybridized carbon atoms gives rise to long range ferromagnetic order except for Cr with anti-ferromagnetic order. The magnetic exchange interaction of TM chains follows like-Zener's p_z-d exchange mechanism: the coexistence of out-of plane p_z-d and in-plane p_x-y-d exchange. Finally, by including spin-orbit interactions within spin-DFT, we calculate the magnetic anisotropy energy of the TM chain on graphyne. We find that the Fe and Co chains show considerable magnetic anisotropy energy (MAE) and orbital magnetic moment. The easy axis of V, Cr, Mn and Fe chains is perpendicular to the surface, whereas the easy axis of Co lies in the surface. Moreover, only V chain shows relatively larger in-plane anisotropy. Our results open a new route to realize the applications of graphyne in spintronics.

preprint2013arXiv

Novel Two-dimensional SiC2 Sheet with Full Pentagon Network

We propose a promising two-dimensional nano-sheet of SiC2 (SiC2-pentagon) consisting of tetrahedral silicon atoms and triple-linked carbon atoms in a fully-pentagon network. The SiC2-pentagon with buckled configuration is more favorable than its planar counterpart and previously proposed SiC2-silagraphene with tetra-coordinate silicon atoms; and its dynamical stability is confirmed through phonon analyzing. Buckled SiC2-pentagon is an indirect-band-gap semiconductor with a gap of 1.388 eV. However, its one-dimensional nanoribbons can be metals or semiconductors depending on the edge type, shape, and decoration. Finally, we propose a method to produce the buckled SiC2-pentagon through chemical exfoliation on the beta-SiC(001)-c(2*2) SDB surface.